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SI8233AD-C-ISR

产品描述Gate Drivers 5kV 4A Hi/LoSide ISO Drvr Dual Input 5V
产品类别半导体    电源管理   
文件大小620KB,共57页
制造商Silicon Laboratories
标准
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SI8233AD-C-ISR概述

Gate Drivers 5kV 4A Hi/LoSide ISO Drvr Dual Input 5V

SI8233AD-C-ISR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Silicon Laboratories
产品种类
Product Category
Gate Drivers
RoHSDetails
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
1250

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Si823x
0.5
AND
4 . 0 A
MP
I S O
D R I V E R S
(2.5
AND
5
K
V
RMS
)
Features
Two completely isolated drivers
60 ns propagation delay (max)
in one package
Independent HS and LS inputs or

Up to 5 kV
RMS
input-to-output
PWM input versions
isolation
Transient immunity >45 kV/µs

Up to 1500 V
DC
peak driver-to-
Overlap protection and
driver differential voltage
programmable dead time
HS/LS and dual driver versions
AEC-Q100 qualification
Up to 8 MHz switching frequency
Wide operating range
0.5 A peak output (Si8230/1/2/7)

–40 to +125 °C
RoHS-compliant packages
4.0 A peak output
(Si8233/4/5/6/8)

SOIC-16 wide body
High electromagnetic immunity

SOIC-16

LGA-14
narrow body
Applications
Power delivery systems
Motor control systems
Isolated dc-dc power supplies
Lighting control systems
Plasma displays
Solar and industrial inverters
Safety Approval
UL 1577 recognized

Up
VDE certification conformity

IEC
to 5000 Vrms for 1 minute
CSA component notice 5A
approval

IEC
60747-5-5 (VDE 0884 Part 5)

EN 60950-1 (reinforced
insulation)
60950-1, 61010-1, 60601-1
(reinforced insulation)
CQC certification approval

GB4943.1
Description
The Si823x isolated driver family combines two independent, isolated
drivers into a single package. The Si8230/1/3/4 are high-side/low-side
drivers, and the Si8232/5/6/7/8 are dual drivers. Versions with peak
output currents of 0.5 A (Si8230/1/2/7) and 4.0 A (Si8233/4/5/6/8) are
available. All drivers operate with a maximum supply voltage of 24 V.
The Si823x drivers utilize Silicon Labs' proprietary silicon isolation
technology, which provides up to 5 kV
RMS
withstand voltage per UL1577
and fast 60 ns propagation times. Driver outputs can be grounded to the
same or separate grounds or connected to a positive or negative voltage.
The TTL level compatible inputs with >400 mV hysteresis are available in
individual control input (Si8230/2/3/5/6/7/8) or PWM input (Si8231/4)
configurations. High integration, low propagation delay, small installed
size, flexibility, and cost-effectiveness make the Si823x family ideal for a
wide range of isolated MOSFET/IGBT gate drive applications.
Ordering Information:
See page 39.
Rev. 1.6 4/14
Copyright © 2014 by Silicon Laboratories
Si823x
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