VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
3.0 A
20 V, 30 V, 40 V
0.49 V
20 mA at 125 °C
150 °C
Single die
8 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
20 to 40
490
0.49
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRD320PbF
20
VS-MBRD330PbF
30
VS-MBRD340PbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 16 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
L
= 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.0
490
75
8.0
1.0
mJ
A
A
UNITS
Document Number: 94313
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
0.48
0.58
0.41
0.55
0.02
10.7
189
5.0
-
MAX.
0.6
0.7
0.49
0.625
0.2
20
-
-
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Approximate weight
SYMBOL
T
J (1)
T
Stg
R
thJC
R
thJA
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
- 40 to 175
6.0
°C/W
80
0.3
0.01
MBRD320
Marking device
Case style D-PAK (similar to TO-252AA)
MBRD330
MBRD340
Note
(1)
UNITS
°C
g
oz.
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94313
Revision: 14-Jan-11
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 125 °C
10
1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
T
J
= 25 °C
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
t
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
0.01
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94313
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
160
150
Schottky Rectifier, 3.0 A
Allowable Case Temperature (°C)
2.5
Average Power Loss (W)
RMS limit
2.0
DC
140
130
120
110
100
DC
1.5
1.0
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
0.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
1
2
3
4
5
0
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94313
Revision: 14-Jan-11
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
1
2
3
4
5
6
-
-
-
-
-
-
2
D
3
3
4
40
5
TR
6
PbF
7
Vishay Semiconductors product
Schottky MBR series
D = TO-252AA (D-PAK)
Current rating (3 = 3 A)
Voltage ratings
None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
20 = 20 V
30 = 30 V
40 = 40 V
7
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Document Number: 94313
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
