MMBT3906TT1
General Purpose
Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
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•
NSVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−40
−40
−5.0
−200
Unit
Vdc
Vdc
Vdc
mAdc
2
1
3
2
EMITTER
CASE 463
SOT−416/SC−75
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature Range
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−65 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
2A
M
G
1
= Device Code
= Date Code*
= Pb−Free Package
2A M
G
G
Max
Unit
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
×
1.0 Inch Pad
ORDERING INFORMATION
Device
MMBT3906TT1G
Package
SOT−416
(Pb−Free)
SOT−416
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
NSVMMBT3906TT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
August, 2017 − Rev. 3
Publication Order Number:
MMBT3906TT1/D
MMBT3906TT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance1
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= −5.0 Vdc, I
C
= −100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc)
(I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc)
(I
B1
= I
B2
= −1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
225
ns
75
ns
f
T
250
C
obo
−
C
ibo
−
h
ie
2.0
h
re
0.1
h
fe
100
h
oe
3.0
NF
−
4.0
60
dB
400
mmhos
10
−
12
X 10
− 4
10.0
k
W
4.5
pF
−
pF
MHz
h
FE
60
80
100
60
30
V
CE(sat)
−
−
V
BE(sat)
−0.65
−
−0.85
−0.95
−0.25
−0.4
Vdc
−
−
300
−
−
Vdc
−
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−5.0
I
BL
−
I
CEX
−
−50
−50
nAdc
−
nAdc
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
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2
MMBT3906TT1
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 1. Normalized Thermal Response
3V
+ 9.1 V
275
< 1 ns
10 k
C
S
< 4 pF*
+10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
10.9 V
0
10 k
1N916
< 1 ns
3V
275
C
S
< 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
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3
MMBT3906TT1
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
Q, CHARGE (pC)
1000
700
500
300
200
Q
A
100
1.0
0.1
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Capacitance
Figure 5. Charge Data
500
300
200
100
TIME (ns)
70
50
30
20
10
7
5
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
/I
B
= 10
500
300
200
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn −On Time
Figure 7. Fall Time
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MMBT3906TT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
2.0
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8.0
6.0
4.0
2.0
0
0.1
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
3.0
1.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
R
S
, SOURCE RESISTANCE (kW)
Figure 8.
Figure 9.
h PARAMETERS
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0 7.0 10
100
70
50
30
20
200
hfe , CURRENT GAIN
100
70
50
10
7.0
5.0
0.1
0.2
0.5 0.7 1.0
2.0 3.0
0.3
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
10
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Current Gain
20
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
10
h ie , INPUT IMPEDANCE (k
Ω)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
7.0
5.0
3.0
2.0
Figure 11. Output Admittance
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 12. Input Impedance
Figure 13. Voltage Feedback Ratio
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