Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Pulsed Drain Current
Source Drain Current Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
4
a
3.8
3.7
b,c
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b,f
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
SYMBOL
R
thJA
R
thJF
N-CHANNEL
TYP.
70
33
MAX.
85
40
P-CHANNEL
TYP.
70
33
MAX.
85
40
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 120 °C/W.
S13-2463-Rev. C, 02-Dec-13
Document Number: 74483
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
8
8
1.
m
m
m
Top View
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
N-CHANNEL
30
± 20
P-CHANNEL
-30
-3.7
-2.7
-2.5
b,c
-1.8
b,c
-10
-2.5
-1.3
b,c
3.1
2
1.5
b,c
0.8
b,c
UNIT
V
2.6
b,c
10
2.5
1.3
b,c
3.12
2
1.5
b,c
A
W
0.8
b,c
-55 to 150
260
°C
Si5504BDC
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= -30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
V
DS
-5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 3.1 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= -10 V, I
D
= -2.1 A
V
GS
= 4.5 V, I
D
= 1 A
V
GS
= -4.5 V, I
D
= -0.43 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.6 A
Total Gate Charge
Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -2.5 A
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 3.6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -2.5 A
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
f = 1 MHz
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
220
170
50
50
25
31
4.5
4.5
2
2.2
0.7
0.7
0.7
1
3
13
-
-
-
-
-
-
7
7
3
3.5
-
-
-
-
-
-
nC
pF
g
fs
V
DS
= 15 V, I
D
= 3.1 A
V
DS
= -15 V, I
D
= -2.1 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
-
-
-
-
1.5
-1.5
-
-
-
-
-
-
10
-10
-
-
-
-
-
-
-
-
27
-30
-5
3.5
-
-
-
-
-
-
-
-
-
-
0.053
0.112
0.081
0.188
5
3.5
-
-
-
-
-
-
3
-3
100
-100
1
-1
5
-5
-
-
0.065
0.140
0.100
0.235
-
-
S
A
μA
V
nA
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
S13-2463-Rev. C, 02-Dec-13
Document Number: 74483
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5504BDC
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
SYMBOL
TEST CONDITIONS
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 5.8
I
D
2.6 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= -15 V, R
L
= 7.5
I
D
-2 A, V
GEN
= -4.5 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 5.8
I
D
2.6 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= -15 V, R
L
= 7.5
I
D
-2 A, V
GEN
= -10 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 2.6 A, V
GS
= 0 V
I
S
= -2 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 2.6 A, dI/dt = 100 A/μs, T
J
= 25 °C
P-Channel
I
F
= -2 A, dI/dt = -100 A/μs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
30
80
60
12
10
25
10
4
4
12
10
10
10
5
5
-
-
-
-
0.8
-0.8
30
20
20
10
23
13
7
7
MAX.
25
45
120
90
20
15
40
15
8
8
20
15
15
15
10
10
2.5
-2.5
10
-10
1.2
-1.2
50
40
40
20
-
-
-
-
UNIT
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
V
ns
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2463-Rev. C, 02-Dec-13
Document Number: 74483
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5504BDC
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
5
Vishay Siliconix
16
I
D
- Drain Current (A)
V
GS
= 10 V thru 6 V
5V
I
D
- Drain Current (A)
4
12
3
T
C
= 25 °C
2
T
C
= 125 °C
1
8
4V
4
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
250
C
iss
200
0.12
V
GS
= 4.5 V
150
0.08
V
GS
= 10 V
0.04
100
C
oss
50
C
rss
0
5
10
15
20
25
30
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 15 V, I
D
= 3.6 A
V
GS
- Gate-to-Source Voltage (V)
8
1.8
Capacitance
V
GS
= 10 V, 4.5 V
I
D
= 3.1 A
1.6
1.4
6
1.2
4
V
DS
= 24 V, I
D
= 3.6 A
1.0
2
0.8
0
0
1
2
3
4
5
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S13-2463-Rev. C, 02-Dec-13
On-Resistance vs. Junction Temperature
Document Number: 74483
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5504BDC
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.20
I
D
= 3.1 A
R
DS(on)
- On-Resistance (Ω)
0.16
Vishay Siliconix
I
S
- Source Current (A)
0.12
125 °C
0.08
25 °C
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.04
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.4
50
On-Resistance vs. Gate-to-Source Voltage
2.2
I
D
= 250 µA
2.0
V
GS(th)
(V)
Power (W)
40
30
1.8
20
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.0001 0.001
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
10
Limited by R
DS(on)
*
100 µs
Single Pulse Power
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.01
* V
GS
10
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
100 ms
1 s, 10 s
DC
Safe Operating Area, Junction-to-Ambient
S13-2463-Rev. C, 02-Dec-13
Document Number: 74483
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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