VS-SD703C..L Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 700 A, 790 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC
®
B-PUK (DO-200AB)
B-PUK (DO-200AB)
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
700 A, 790 A
B-PUK (DO-200AB)
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
50 Hz
60 Hz
Range
T
J
TEST CONDITIONS
SD703C..L
S20
700
T
hs
55
1320
9300
9730
1200 to 2500
2.0
25
-40 to +150
S30
790
55
1470
9600
10 050
1200 to 2500
3.0
25
-40 to +150
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
12
VS-SD703C..L
16
20
25
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1200
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
1700
2100
2600
50
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93179
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD703C..L Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % V
RRM
t = 8.3 ms reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % V
RRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
SD703C..L
s20
s30
700 (365) 790 (400)
55 (85)
55 (85)
1320
1470
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
0.95
1.11
1.05
0.80
0.76
2.20
0.60
mW
r
f2
V
FM
0.56
1.85
V
UNITS
A
°C
I
FSM
A
Maximum I
2
t for fusing
I
2
t
kA
2
s
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
kA
2
s
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
2.0
3.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
dI/dt
(A/μs)
50
V
r
(V)
-50
TYPICAL VALUES
AT T
J
= 150 °C
I
FM
t
rr
AT 25 % I
RRM
(μs)
3.5
5.0
Q
rr
(μC)
240
380
I
rr
(A)
110
130
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S20
S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
case junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 150
UNITS
°C
See dimensions - link at the end of datasheet
0.092
K/W
0.046
9800
N
(1000)
(kg)
250
g
B-PUK (DO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.011
0.011
0.013
0.014
0.017
0.017
0.024
0.025
0.043
0.043
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.008
0.008
0.013
0.013
0.018
0.018
0.026
0.026
0.043
0.044
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93179
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD703C..L Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heats T
ink emperature (°C)
160
140
120
100
Conduc tion Period
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
80
60
40
S
D703C..S20L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.092 K/ W
S
D703C..S
30L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.092 K/ W
Conduction Angle
80
60
40
20
0
0
200
400
600
800
1000
Average Forward Current (A)
30°
60°
30°
20
0
100
200
60°
300
90°
120°
180°
500
600
90°
120°
180°
DC
400
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
160
140
120
100
Conduction Period
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
S
D703C..S
20L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.092 K/ W
S
D703C..S
20L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.046 K/ W
Conduction Angle
80
60
40
20
0
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
80
60
40
20
0
0
100 200 300 400 500 600 700 800 900
Average Forward Current (A)
30°
60°
90°
120°
180°
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
80
Maximum Allowable Heatsink T
emperature (°C)
S
D703C..S
30L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.092 K/ W
160
140
120
100
Conduction Period
S
D703C..S
20L S
eries
(Double S
ide Cooled)
R
thJ-hs
(DC) = 0.046 K/ W
Conduc tion Angle
80
60
40
20
0
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
30°
60
40
20
0
100
200
60°
90°
120°
180°
300
400
500
600
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93179
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD703C..L Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
3000
2500
2000
1500
1000
500
0
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
DC
180°
120°
90°
60°
30°
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
S
D703C..S
30L Series
(Double S
ide Cooled)
R
thJ-hs
(DC) = 0.046 K/ W
RMS Limit
Conduc tion Angle
80
60
40
20
0
0
200
400
600
800
1000
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Period
S
D703C..S
20L S
eries
T
J
= 150°C
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
Conduction Period
2500
180°
120°
90°
60°
30°
RMS Limit
S
D703C..S
30L S
eries
(Double S
ide Cooled)
R
thJ-hs
(DC) = 0.046 K/ W
2000
1500
80
30°
60
40
20
0
0
250
500
750
1000 1250 1500
Average Forward Current (A)
60°
90°
120°
180°
DC
1000
Conduction Angle
500
S
D703C..S
30L S
eries
T = 150°C
J
0
200
400
600
800
1000
0
Average Forward Current (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
2500
3000
2500
2000
1500
1000
500
0
0
400
800
1200
1600
Average Forward Current (A)
DC
180°
120°
90°
60°
30°
RMS Limit
2000
1500
180°
120°
90°
60°
30°
RMS Limit
1000
Conduc tion Angle
Conduction Period
500
S
D703C..S
20L S
eries
T
J
= 150°C
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
S
D703C..S
30L S
eries
T = 150°C
J
0
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93179
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD703C..L Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
10000
9000
8000
7000
6000
5000
4000
3000
2000
0.01
S
D703C..S
30L S
eries
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Dura tion.
Initial T = 150°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
Peak Half S Wave Forward Current (A)
ine
9000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge
8000
Initial T = 150 °C
J
@60 Hz 0.0083 s
7000
@50 Hz 0.0100 s
6000
5000
4000
3000
S
D703C..S
20L S
eries
2000
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
0.1
Pulse T
rain Duration (s)
1
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Peak Half S Wave Forward Current (A)
ine
Instantaneous Forward Current (A)
8000
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Dura tion.
Initial T = 150°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
T = 25°C
J
T = 150°C
J
1000
6000
4000
S
D703C..S
20L S
eries
2000
0.01
0.1
Pulse T
rain Duration (s)
1
S
D703C..S
20L S
eries
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
Peak Half S Wave F
ine
orward Current (A)
9000
8000
7000
6000
5000
4000
3000
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
10000
T = 25°C
J
T = 150°C
J
1000
S
D703C..S
30L S
eries
S
D703C..S
30L S
eries
2000
1
10
100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93179
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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