IRFHS9351PbF
HEXFET
®
Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@V
GS
= -10V)
-30
±20
170
-3.4
V
V
mΩ
A
S1 1
T OP VIEW
6 D1
D1
S2
5 G2
G2
D1
D1
D2
I
D
(@T
C
= 25°C)
d
G1 2
FET 1
D2 3
FET 2
D2
4 S2
D2
G1
S1
2mm x 2mm Dual PQFN
Applications
l
l
Charge and Discharge Switch for Battery Application
System/load switch
Features and Benefits
Features
Low R
DSon
(≤ 170mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
A
= 70°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
-30
± 20
-2.3
-1.5
-5.1
-4.1
-3.4
-20
1.4
0.9
Units
V
f
f
c
d
d
d
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.01
-55 to + 150
Notes
through
are on page 2
1
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2014 International Rectifier
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May 21, 2014
IRFHS9351PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
DSS
/ T
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off )
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Min.
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
2.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
135
235
-1.8
-4.6
–––
–––
–––
–––
–––
1.9
3.7
0.6
1.1
17
8.3
30
6.3
7.9
160
39
26
Max.
–––
–––
170
290
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
mV/°C
μA
nA
S
nC
nC
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.1A
e
V
GS
= -4.5V, I
D
= -2.5A
e
V
DS
= V
GS
, I
D
= -10μA
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -10V, I
D
= -3.1A
V
DS
= -15V,V
GS
= -4.5V,I
D
= - 3.1A
V
GS
= -10V
V
DS
= -15V
I
D
= -3.1A
V
DD
= -15V, V
GS
= -4.5V
h
Total Gate Charge
h
Total Gate Charge
h
Gate-to-Drain Charge
h
Gate R esistance
h
Gate-to-Source Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer C apacitance
e
ns
I
D
= -3.1A
R
G
= 1.8
See Figs. 19a & 19b
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0KHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
20
42
Max.
-5.1
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
D
Ã
-20
-1.2
30
63
Typ.
–––
–––
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= -3.1A, V
G S
= 0V
e
T
J
= 25°C, I
F
= -3.1A, V
DD
= -15V
di/dt = 370/μs
Thermal Resistance
R
R
R
R
JC
JC
JA
JA
e
(Bottom)
(Top)
g
Junction-to-Case
g
Junction-to-Case
Parameter
Max.
19
170
90
75
Units
°C/W
Junction-to-Ambient
f
Junction-to-Ambient (t<10s)
f
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package. .
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
.
2
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May 21, 2014
IRFHS9351PbF
100
TOP
100
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
TOP
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
1
-2.8V
-2.8V
0.1
0.1
1
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
10
100
0.1
1
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = -3.1A
1.4
VGS = -10V
-ID, Drain-to-Source Current(A)
10
TJ = 150°C
1
TJ = 25°C
VDS = -15V
≤60μs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
1.2
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
1000
VGS = 0V,
f = 1 KHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= -3.1A
-VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= -24V
VDS= -15V
C, Capacitance (pF)
Ciss
100
Coss
Crss
10
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2014 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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May 21, 2014
IRFHS9351PbF
100
-ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-ISD, Reverse Drain Current (A)
10
1msec
1
100μsec
10
TJ = 150°C
1
TJ = 25°C
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
DC
10msec
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
6
Fig 8.
Maximum Safe Operating Area
2.5
-V GS(th), Gate threshold Voltage (V)
5
ID , Drain Current (A)
2.0
ID = -10uA
1.5
4
3
2
1.0
1
0
25
50
75
100
125
150
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
TC , CaseTemperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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May 21, 2014
IRFHS9351PbF
(
RDS(on), Drain-to -Source On Resistance m
Ω)
Ω)
RDS(on), Drain-to -Source On Resistance (m
500
ID = -3.1A
400
500
400
300
TJ = 125°C
200
TJ = 25°C
100
0
5
10
15
20
25
300
Vgs = -4.5V
200
Vgs = -10V
100
0
2
4
-ID, Drain Current (A)
6
8
-VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
400
Fig 13.
Typical On-Resistance vs. Drain Current
300
Power (W)
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14.
Typical Power vs. Time
D.U.T
*
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
•
•
•
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor
Curent
Inductor
Current
Ripple
≤
5%
I
SD
*
Reverse Polarity of D.U.T for P-Channel
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Diode Reverse Recovery Test Circuit
for P-Channel HEXFET
®
Power MOSFETs
5
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©
2014 International Rectifier
Submit Datasheet Feedback
May 21, 2014
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