FMMT596
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device
FMMT596TA
Reel size
(inches
7
Tape width
(mm)
8
Quantity
per reel
3,000
Device marking
596
C
C
E
B
B
E
Pinout - top view
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Power dissipation at T
amb
=25°C
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
Value
-220
-200
-5
-1
-0.3
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
°C
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
FMMT596
Electrical characteristics (T
amb
= 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter saturation
voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
Min.
-220
-200
-5
-100
-100
-100
-0.2
-0.35
Typ.
Max.
Unit Conditions
V
V
V
nA
nA
nA
V
V
I
C
=-100 A
I
C
=-10mA
(*)
I
E
=-100 A
V
CB
=-200V
V
EB
=-4V
V
CES
=-200V
I
C
=-100mA, I
B
=-10mA,
I
B
=-250mA,
I
B
=-25mA
(*)
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
100
100
85
35
Transition frequency
Output capacitance
Switching times
f
T
C
obo
td
tr
ts
tf
Switching times
td
tr
ts
tf
22
19
472
70
44
31
665
76
2%.
-1.0
-0.9
V
V
I
C
=-250mA, I
B
=-25mA
(*)
I
C
=-250mA,
V
CE
=-10V
(*)
I
C
=-1mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V
(*)
300
I
C
=-250mA, V
CE
=-10V
(*)
I
C
=-400mA, V
CE
=-10V
(*)
MHz I
C
=-50mA, V
CE
=-10V,
f=100MHz
150
10
pF
ns
V
CB
=-10V, f=1MHz
I
C
=-200mA, V
CC
=-80V
I
b1
=I
b2
=-20mA
ns
I
C
=-100mA, V
CC
=-80V
I
b1
=I
b2
=-10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
FMMT596
Typucal characteristics
0.4
0.3
0.2
0.1
0
0.4
I
C
/I
B
=10
+25°C
I
C
/I
B
=10
I
C
/I
B
=50
V
CE(sat)
- (V)
V
CE(sat)
- (V)
0.3
0.2
0.1
0
-55°C
+25°C
+100°C
1mA
10mA
100mA
I
C
-collector current
V
CE(sat)
v I
C
V
CE
=10V
1A
1mA
10mA
100mA
I
C
-collector current
V
CE(sat)
v I
C
1mA
320
+100°C
1.0
0.8
I
C
/I
B
=10
h
FE
- typical gain
+25°C
V
BE(sat)
- (V)
240
160
-55°C
0.6
0.4
0.2
-55°C
+25°C
+100°C
80
0
1mA
10mA
100mA
I
C
-collector current
h
FE
v I
C
1A
0
1mA
10mA
100mA
I
C
-collector current
V
BE(sat)
v I
C
1mA
V
BE(on)
- (V)
0.8
0.6
0.4
0.2
0
1mA
-55°C
+25°C
+100°C
I
C
-collector current (A)
1.0
V
CE
=10V
1
0.1
DC
1s
100ms
1ms
100 s
0.01
10mA
100mA
I
C
-collector current
V
BE(on)
v I
C
1A
0.001
0.1V
1V
10V
100V
1000V
V
CE
-collector emitter voltage (V)
Safe operating area
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
FMMT596
Package outline - SOT23
E
e
b
3 leads
e1
L1
E1
D
A
A1
L
c
Dim.
A
A1
b
c
D
e
Millimeters
Min.
-
0.01
0.30
0.085
2.80
Max.
1.12
0.10
0.50
0.20
3.04
-
Inches
Min.
0.0004
0.012
0.003
0.110
Max.
0.044
0.004
0.020
0.008
0.120
Dim.
e1
E
E1
L
L1
-
Millimeters
Min.
2.10
1.20
0.25
0.45
-
Max.
2.64
1.40
0.60
0.62
-
1.90 NOM
Inches
Min.
0.083
0.047
0.0098
0.018
-
Max.
0.104
0.055
0.0236
0.024
-
0.075 NOM
0.95 NOM
0.037 NOM
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
FMMT596
Intentionally left blank
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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