Bipolar Transistors - BJT 1A 25V PNP
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ON Semiconductor(安森美) |
| 零件包装代码 | TO-92 |
| 包装说明 | CASE 29-11, TO-226, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | CASE 29-11 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 其他特性 | EUROPEAN PART NUMBER |
| 最大集电极电流 (IC) | 1 A |
| 集电极-发射极最大电压 | 20 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 85 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 240 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.8 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 65 MHz |
| BC369ZL1 | BC369 | BC368ZL1 | BC368 | BC368ZL1G | BC369G | BC368G | |
|---|---|---|---|---|---|---|---|
| 描述 | Bipolar Transistors - BJT 1A 25V PNP | Bipolar Transistors - BJT 1A 25V PNP | Bipolar Transistors - BJT 1A 25V NPN | Bipolar Transistors - BJT 1A 25V NPN | Bipolar Transistors - BJT 1A 25V NPN | Bipolar Transistors - BJT 1A 25V PNP | Bipolar Transistors - BJT 1A 25V NPN |
| 厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) |
| 零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| 包装说明 | CASE 29-11, TO-226, 3 PIN | TO-226, 3 PIN | CASE 29-11, TO-226, 3 PIN | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CASE 29-11, TO-226, 3 PIN | CYLINDRICAL, O-PBCY-T3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | CASE 29-11 | 29-11 | CASE 29-11 | 29-11 | 29-11 | CASE 29-11 | 29-11 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 符合 | 符合 | 符合 |
| 最大集电极电流 (IC) | 1 A | 1 A | 1 A | - | - | 1 A | - |
| 集电极-发射极最大电压 | 20 V | 20 V | 20 V | - | - | 20 V | - |
| 配置 | SINGLE | SINGLE | SINGLE | - | - | SINGLE | - |
| 最小直流电流增益 (hFE) | 85 | 85 | 85 | - | - | 85 | - |
| JEDEC-95代码 | TO-92 | TO-92 | TO-92 | - | - | TO-92 | - |
| JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | - | - | O-PBCY-T3 | - |
| JESD-609代码 | e0 | e0 | e0 | - | - | e1 | - |
| 元件数量 | 1 | 1 | 1 | - | - | 1 | - |
| 端子数量 | 3 | 3 | 3 | - | - | 3 | - |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | - | - | 150 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | - |
| 封装形状 | ROUND | ROUND | ROUND | - | - | ROUND | - |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | - | CYLINDRICAL | - |
| 峰值回流温度（摄氏度） | 240 | 240 | 240 | - | - | 260 | - |
| 极性/信道类型 | PNP | PNP | NPN | - | - | PNP | - |
| 最大功率耗散 (Abs) | 0.8 W | 0.8 W | 0.8 W | - | - | 1.5 W | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified | - |
| 表面贴装 | NO | NO | NO | - | - | NO | - |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - | THROUGH-HOLE | - |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | - | - | BOTTOM | - |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | - | - | 40 | - |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | - | AMPLIFIER | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | - | SILICON | - |
| 标称过渡频率 (fT) | 65 MHz | 65 MHz | 65 MHz | - | - | 65 MHz | - |
| Brand Name | - | ON Semiconductor | - | ON Semiconductor | ON Semiconductor | - | ON Semiconductor |
| 是否无铅 | - | 含铅 | - | 含铅 | 不含铅 | - | 不含铅 |
| Factory Lead Time | - | 1 week | - | 1 week | 1 week | 1 week | - |
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