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SF804G

产品描述Rectifiers 8A,200V,GLASS Pass Superfast,Sgl Rect
产品类别分立半导体    二极管   
文件大小379KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SF804G概述

Rectifiers 8A,200V,GLASS Pass Superfast,Sgl Rect

SF804G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.975 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
湿度敏感等级1
最大非重复峰值正向电流125 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压200 V
最大反向恢复时间0.035 µs
表面贴装NO
端子面层Pure Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
SF801G - SF808G
Taiwan Semiconductor
CREAT BY ART
8A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@4A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
3
- 55 to +150
- 55 to +150
0.975
10
400
35
50
SF
50
35
50
SF
100
70
100
SF
150
105
150
SF
200
140
200
8
125
1.3
1.7
SF
300
210
300
SF
400
280
400
SF
500
350
500
SF
600
480
600
801G 802G 803G 804G 805G 806G 807G 808G
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: H1511

 
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