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1N4305_T50R

产品描述Diodes - General Purpose, Power, Switching Hi Conductance Fast
产品类别半导体    分立半导体   
文件大小26KB,共2页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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1N4305_T50R概述

Diodes - General Purpose, Power, Switching Hi Conductance Fast

1N4305_T50R规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Diodes - General Purpose, Power, Switching
RoHSDetails
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
DO-35
Peak Reverse Voltage75 V
Max Surge Current4 A
If - Forward Current0.3 A
ConfigurationSingle
Recovery Time4 ns
Vf - Forward Voltage0.85 V
Ir - Reverse Current0.1 uA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 175 C
系列
Packaging
Cut Tape
系列
Packaging
Reel
高度
Height
1.91 mm
长度
Length
4.56 mm
类型
Type
Small Signal Switching Diode
宽度
Width
1.91 mm
工厂包装数量
Factory Pack Quantity
30000
Vr - Reverse Voltage75 V
单位重量
Unit Weight
0.004833 oz

文档预览

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1N4305 Small Signal Diode
December 2004
1N4305
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings *
T
Symbol
V
RRM
I
F(AV)
I
FSM
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
75
300
1.0
4.0
-65 to +200
175
Unit
V
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Parameter
Value
500
300
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Breakdown Voltage
Forward Voltage
Parameter
I
R
= 5µA
I
F
= 250µA
I
F
= 1mA
I
F
= 2mA
I
F
= 10mA
Conditions
Min.
75
0.505
0.550
0.610
0.700
Max
0.575
0.650
0.710
0.850
100
100
2
2
4
Units
V
V
V
V
V
nA
µA
pF
ns
ns
I
R
C
T
t
rr
Reverse Leakage
Total Capacitance
Reverse Recovery Time
V
R
= 50V
V
R
= 50V, T
A
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= 10mA, V
R
= 6.0V
R
L
= 100Ω, I
rr
= 1mA
I
F
= I
R
= 10mA, I
rr
= 1.0mA,
R
L
= 100Ω
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
1N4305 Rev. A

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