BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
●
●
●
Rugged Triple-Diffused Planar Construction
15 A Continuous Collector Current
1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= 0 V)
Collector-emitter voltage (R
BE
= 10
Ω)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Non repetitive accidental peak surge current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
2 ms, duty cycle
≤
2%.
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
SYMBOL
V
CES
V
CER
V
CEO
I
C
I
CM
I
B
I
BM
I
CSM
P
tot
T
j
T
stg
VALUE
850
1000
850
1000
400
450
15
30
4
20
55
125
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
I
C
= 200 mA
V
CE
= 850 V
I
CES
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
V
CE
= 850 V
I
CER
Collector-emitter
cut-off current
Emitter cut-off
current
Emitter-base
breakdown voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
I
EBO
V
EBO
V
EB
=
I
E
=
I
B
=
V
CE(sat)
I
B
=
I
B
=
I
B
=
V
BE(sat)
f
t
C
ob
I
B
=
I
B
=
V
CE
=
V
CB
=
5V
50 mA
2A
3A
1.6 A
2.4 A
2A
1.6 A
10 V
20 V
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
R
BE
= 10
Ω
R
BE
= 10
Ω
R
BE
= 10
Ω
R
BE
= 10
Ω
I
C
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
10 A
15 A
8A
12 A
10 A
8A
(see Notes 3 and 4)
f = 1 MHz
f = 1 MHz
(see Notes 3 and 4)
BUV48
BUV48
BUV48A
BUV48A
BUV48
BUV48A
10
150
7
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
(see Note 2)
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
MIN
400
450
0.2
0.2
2.0
2.0
0.5
0.5
4.0
4.0
1
30
1.5
5.0
1.5
5.0
1.6
1.6
V
MHz
pF
V
mA
V
mA
mA
TYP
MAX
UNIT
V
I
C
= 0.5 A
I
C
= 0
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
Junction to case thermal resistance
MIN
TYP
MAX
1
UNIT
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
s
t
f
t
on
t
s
t
f
†
TEST CONDITIONS
I
C
= 10 A
I
B(on)
= 2 A
I
C
= 8 A
I
B(on)
= 1.6 A
V
CC
= 150 V
I
B(off)
= -2 A
V
CC
= 150 V
I
B(off)
= -1.6 A
†
MIN
BUV48
(see Figures 1 and 2)
BUV48A
(see Figures 1 and 2)
TYP
MAX
1.0
3.0
0.8
1.0
3.0
0.8
UNIT
µs
µs
µs
µs
µs
µs
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 100°C case temperature
PARAMETER
t
sv
t
fi
t
sv
t
fi
Voltage storage time
Current fall time
Voltage storage time
Current fall time
I
C
= 10 A
V
BE(off)
= -5 V
I
C
= 8 A
V
BE(off)
= -5 V
TEST CONDITIONS
I
B(on)
= 2 A
(see Figures 3 and 4)
I
B(on)
= 1.6 A
(see Figures 3 and 4)
†
MIN
BUV48
BUV48A
TYP
MAX
4.0
0.4
4.0
0.4
UNIT
µs
µs
µs
µs
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
120
Ω
680
µ
F
100
Ω
V cc V= 250 V
CC
T
V1
tp
47
Ω
100
µ
F
TUT
15
Ω
V1
100
Ω
BD136
82
Ω
680
µ
F
t
p
= 20
µs
Duty cycle = 1%
V
1
= 15 V, Source Impedance = 50
Ω
Figure 1. Resistive-Load Switching Test Circuit
C
IC
A - B = t
d
B - C = t
r
E - F = t
f
D - E = t
s
A - C = t
on
D - F = t
off
B
90%
90%
E
10%
10%
F
0%
90%
IB
D
dI
B
≥
2 A/µs
dt
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33
Ω
+5V
D45H11
BY205-400
BY205-400
33
Ω
1 pF
RB
(on)
180
µH
vcc
V Gen
68
Ω
1 k
Ω
0.02
µF
+5V
1 k
Ω
2N2222
TUT
BY205-400
Vclamp = 400 V
270
Ω
BY205-400
1 k
Ω
2N2904
5X BY205-400
Adjust pw to obtain I
C
47
Ω
For I
C
< 6 A
For I
C
≥
6 A
V
CC
= 50 V
V
CC
= 100 V
100
Ω
D44H11
V
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
A - B = t
sv
B - C = t
rv
D - E = t
fi
E - F = t
ti
B - E = t
xo
IB
A (90%)
Base Current
C
90%
V
CE
B
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t
r
< 15 ns, R
in
> 10
Ω,
C
in
< 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
100
V
CE
= 5 V
TCP765AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
TCP765AB
h
FE
- Typical DC Current Gain
T
C
= 125°C
T
C
= 25°C
T
C
= -65°C
4·0
I
C
= 5 A
I
C
= 10 A
I
C
= 15 A
T
C
= 25°C
3·0
10
2·0
1·0
1·0
0·1
1·0
I
C
- Collector Current - A
10
20
0
0·1
1·0
I
B
- Base Current - A
10
Figure 5.
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
5·0
TCP765AI
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·6
V
BE(sat)
- Base-Emitter Saturation Voltage - V
1·5
I
C
= 15 A
1·4
1·3
I
C
= 10 A
1·2
1·1
1·0
0·9
0·8
I
C
= 5 A
TCP765AC
4·0
I
C
= 5 A
I
C
= 10 A
I
C
= 15 A
T
C
= 100°C
3·0
2·0
1·0
0
0·1
1·0
I
B
- Base Current - A
10
0
1
2
3
4
5
6
I
B
- Base Current - A
Figure 7.
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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