IR MOSFET
StrongIRFET™
IRFP7718PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on) typ.
75V
1.45m
1.80m
355A
195A
G
S
max
I
D (Silicon Limited)
I
D (Package Limited)
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
GD
S
TO-247AC
D
Drain
S
Source
Base part number
IRFP7718PbF
Package Type
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP7718PbF
(
RDS(on), Drain-to -Source On Resistance m
)
6
400
ID = 100A
Limited By Package
300
4
ID, Drain Current (A)
20
TJ = 125°C
2
200
100
TJ = 25°C
0
4
8
12
16
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
2015-11-30
Absolute Maximium Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
IRFP7718PbF
Max.
355
250
195
1590
517
3.5
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
1160
2004
See Fig 14, 15, 23a, 23b
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
mJ
A
mJ
Units
°C/W
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
42
–––
1.45 1.80
1.60 –––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
0.9
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 6V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=75 V, V
GS
= 0V
µA
V
DS
=75V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 233µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1279A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 63A, V
GS
=10V. .
Pulse drain current is limited at 780A by source bonding technology.
2
2015-11-30
IRFP7718PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
420
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
552
119
168
384
58
164
266
Max.
–––
830
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
355
A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.6
75
80
208
251
4.8
1590
1.3
–––
–––
–––
–––
–––
–––
V
Units
Units
Conditions
S V
DS
= 10V, I
D
=100A
I
D
= 100A
V
DS
= 38V
nC
V
GS
= 10V
V
DD
= 38V
I
D
= 100A
R
G
= 2.6
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 100KHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
ns
––– 160
––– 29550
––– 2270
––– 1395
–––
–––
Min.
–––
2010
2560
Typ.
–––
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
2015-11-30
1000
TOP
IRFP7718PbF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
100
10
60µs PULSE WIDTH
Tj = 25°C
4.5V
4.5V
1
0.1
1
10
100
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
2.5
Fig 4.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
TJ = 175°C
ID = 100A
VGS = 10V
2.0
10
1.5
TJ = 25°C
1
1.0
VDS = 25V
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS= 60V
VDS= 38V
VDS= 15V
100000
C, Capacitance (pF)
Ciss
10000
Coss
1000
Crss
100
1
10
100
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-30
1000
1000
ID, Drain-to-Source Current (A)
IRFP7718PbF
100µsec
1msec
100
Limited by Package
ISD, Reverse Drain Current (A)
TJ = 175°C
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10msec
10
TJ = 25°C
1
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
DC
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
5.0
90
Id = 2.0mA
4.0
85
Energy (µJ)
3.0
2.0
80
1.0
75
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to–Source Breakdown Voltage
(
RDS(on), Drain-to -Source On Resistance
m
)
Fig 12.
Typical C
oss
Stored Energy
2.2
VGS = 5.5V
VGS = 6.0V
2.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
1.8
1.6
1.4
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
2015-11-30
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