PTAC210802FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 1805 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 2170 MHz frequency band. Features
include dual-path design, input matching, high gain and thermally-
enhanced package with earless flange. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTAC210802FC
Package H-37248-4
19
18
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
Efficiency
Two-carrier WCDMA Drive-up
Features
•
•
•
Drain Efficiency (%)
Asymmetrical design
- Main: P1dB = 19 W Typ
- Peak: P1dB = 60 W Typ
Wide video bandwidth
55
50
45
Broadband internal matching
Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P
3dB
= 75 W
- Efficiency = 48%
- Gain @ P3dB = 14 dB
Typical CW pulsed performance, 1880 MHz, 28 V
(Doherty fixture)
- Output power @ P
1dB
= 45 W
- Output power @ P
3dB
= 80 W
- Efficiency = 48%
- Gain@ P
3dB
= 14 dB
•
Gain (dB)
17
16
15
14
13
c210802fc-gc
Gain
40
35
30
25
•
32
34
36
38
40
42
44
46
48
Output Power (dBm)
•
•
Capable of handling 10:1 VSWR @28 V, 80 W (CW)
output power
Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
Pb-free and RoHS compliant
RF Characteristics
•
Two-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Data Sheet
– DRAFT ONLY
Output PAR at 0.01% probability on CCDF
V
DD
= 28 V, I
DQ
= 85 mA, V
GS1
= 1.3 V, P
OUT
= 5 W avg, ƒ
1
= 2165 MHz, ƒ
2
= 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Symbol
G
ps
Min
39
—
8
Typ
—
43
–31
—
Max
17.5
—
–26
—
Unit
dB
%
dBc
dB
15.5
h
D
IMD
OPAR
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
1 of 9
Rev. 06.1, 2018-02-08
PTAC210802FC
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-carrier WCDMA Specifications
(not subject to production test, verified by design/characterization in Infineon
Doherty test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, V
GS1
= 2 V, P
OUT
= 5 W avg, ƒ
1
= 1880 MHz, ƒ
2
= 1870 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Gain
Drain Efficiency
Symbol
G
ps
Min
Typ
36
–38
Max
19.5
—
–33
Unit
dB
%
dBc
17.5
33.5
—
18.3
h
D
ACPR
Adjacent Channel Power Ratio
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
On-State Resistance
Operating Gate Voltage
(main)
(peak)
(main)
(peak)
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, I
DQ
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 85 mA
V
DS
= 28 V, I
DQ
= 360 mA
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
65
—
—
—
—
—
2.30
2.35
Typ
—
—
—
—
0.6
0.19
2.65
2.70
Max
—
1
10
1
—
—
3.0
3.05
Unit
V
µA
µA
V
W
W
V
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
Value
65
–6 to +10
0 to +32
225
–65 to +150
Unit
V
V
V
°C
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within
the operating voltage range (V
DD
) specified above.
Data Sheet
– DRAFT ONLY
2 of 9
Rev. 06.1, 2018-02-08
PTAC210802FC
Confidential, Limited Internal Distribution
Thermal Characteristics
Characteristic
Thermal Resistance (main)
(T
CASE
= 70 °C, 19 W (CW), V
DD
= 28 V, I
DQ
= 85 mA
Thermal Resistance (peak)
(T
CASE
= 70 °C, 60 W (CW), V
DD
= 28 V, I
DQ
= 360 mA
Symbol
R
q
JC
R
q
JC
Value
2.5
0.8
Unit
°C/W
°C/W
Ordering Information
Type and Version
PTAC210802FC V1 R0
PTAC210802FC V1 R250
PTAC210802FC V1 S250
Order Code
PTAC210802FCV1R0XTMA1
PTAC210802FCV1R250XTMA1
PTAC210802FCV1S250XTMA1
Package Description
H-37248-4,
earless flange
H-37248-4,
earless flange
H-37248-4,
earless flange
Tape
& Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 250 pcs
Shipping
Typical Performance
(data taken in a Doherty test fixture)
Two-carrier WCDMA Drive-up
Power Sweep, CW
18
17
V
DD
= 28 V, I
DQ
= 150 mA, V
GS1
= 2 V,
ƒ = 1880 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
V
DD
= 28 V, I
DQ
= 150 mA, V
GS1
= 2 V,
ƒ = 1880 MHz
50
45
19
18
60
50
Gain
Efficiency
Drain Efficiency (%)
35
30
25
c210802fc-1880_g1_rev01
Gain (dB)
Gain (dB)
16
15
14
13
16
15
14
13
c210802fc-1880_g2_rev01
30
20
10
0
Efficiency
32
33
34
35
36
37
38
39
40
41
20
30
32
34
36
38
40
42
44
46
48
Output Power (dBm)
Output Power (dBm)
Data Sheet
– DRAFT ONLY
3 of 9
Rev. 06.1, 2018-02-08
Efficiency (%)
40
17
Gain
40
PTAC210802FC
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-18
-20
-10
-15
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
55
50
45
40
35
30
IMD & ACPR (dBc)
IMD (dBc)
-22
-24
-26
-28
-30
2110 IMDL
2140 IMDL
2170 IMDL
2110 IMDU
2140 IMDU
2170 IMDU
-20
-25
-30
-35
-40
c210802fc-g2
32
34
36
38
40
42
44
46
c210802fc-g1
48
32
34
36
38
40
42
44
46
48
25
Output Power (dBm)
Output Power (dBm)
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
12
10
OPAR
26
22
-10
-15
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V,
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
2110 MHz
2140 MHz
2170 MHz
Single-carrier WCDMA Drive-up
55
Efficiency
OPAR (dB)
Gain (dB)
8
Gain
6
4
2
2110 MHz
2140 MHz
2170 MHz
18
14
10
6
ACPU (dBc)
-20
-25
-30
-35
-40
c210802fc-g4
45
40
ACPU
35
30
25
32
34
36
38
40
42
44
46
c210802fc-g3
48
32
34
36
38
40
42
44
46
48
Output Power (dBm)
Output Power (dBm)
Data Sheet
– DRAFT ONLY
4 of 9
Rev. 06.1, 2018-02-08
Drain Efficiency (%)
50
Drain Efficiency (%)
PTAC210802FC
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA
Broadband Performance
Power Sweep, CW
Return Loss (dB) / IMD (dBc)
60
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V,
P
OUT
= 9 W, 3GPP WCDMA signal,
PAR = 10 dB, BW 3.84 MHz
RL
V
DD
= 28 V, I
DQ
= 100 mA, V
GS1
= 1.3 V
0
-10
20
19
18
Gain
60
55
50
45
40
35
Efficiency
2110 MHz
2140 MHz
2170 MHz
Gain (dB) / Efficiency (%)
50
40
30
20
10
Gain
OPAR
c210802fc-g5
Gain (dB)
17
16
15
14
13
12
32
IMD
-30
-40
-50
-60
30
25
48
c210802fc-g6
0
2010 2050 2090 2130 2170 2210 2250
34
36
38
40
42
44
46
50
20
Frequency (MHz)
Output Power (dBm)
Load Pull Performance
Z Source
G1
G2
D1
S
Z Load
D2
Main Side Load Pull Performance
– Pulsed CW signal: 16 µsec, 10% duty cycle; V
DD
= 28 V, 100 mA
Max Output Power
P
OUT
[dBm]
43.40
43.50
43.64
P
1dB
Freq
[MHz]
2110
2140
2170
28.4 – j28.1
32.4 – j27.7
45.1 – j33.3
Zs
[W]
15.1 – j11.9
10.8 – j10.6
7.7 – j10
Zl
[W]
Gain
[dB]
20.8
22.0
21.6
P
OUT
[W]
22
22
23
PAE
[%]
50
61
58
4.6 – j5.2
5.2 – j7.2
4.15 – j6
Zl
[W]
Gain
[dB]
23.6
23.9
23.4
Max PAE
P
OUT
[dBm]
41.3
41.3
42.1
P
OUT
[W]
13
13
16
68.1
71.9
68.6
PAE
[%]
Peak Side Load Pull Performance
– Pulsed CW signal: 16 µsec, 10% duty cycle; V
DD
= 28 V, V
Gs1
= 1.41 V, Doherty Class C
Max Output Power
P
OUT
[dBm]
49.60
49.50
49.60
P
3dB
Freq
[MHz]
2110
2140
2170
14.8 – j14.6
20.6 – j13.6
24.5 – j9.8
Zs
[W]
2.7 – j7.8
2.6 – j8.1
2.4 – j7.4
Zl
[W]
Gain
[dB]
14.1
14.0
13.9
P
OUT
[W]
91
89
91
62.0
58.8
57.7
PAE
[%]
1.6 – j6.0
1.8 – j6.5
2.0 – j6.6
Zl
[W]
Gain
[dB]
15.3
15.2
15.3
Max PAE
P
OUT
[dBm]
48.3
48.7
48.6
P
OUT
[W]
68
74
72
72.5
68.5
67.9
PAE
[%]
Data Sheet
– DRAFT ONLY
5 of 9
Rev. 06.1, 2018-02-08
Efficiency (%)
Efficiency
-20
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