8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
FEATURES
•
•
•
•
•
•
•
•
•
•
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
RoHS
COMPLIANT
Optimized V
F
vs. I
R
trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
Base
cathode
2
TO-220AC
1
Cathode
3
Anode
APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
V
R
8A
100 V
•
•
•
•
•
•
•
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High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
V
F
T
J
8 Apk, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
8
100
0.55
- 55 to 175
UNITS
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
8TT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 163 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
Following any rated
load condition and with
rated V
RRM
applied
VALUES
8
850
210
67
I
AS
at
T
J
max.
mJ
A
A
UNITS
Document Number: 94536
Revision: 15-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
8A
Forward voltage drop
V
FM (1)
16 A
8A
16 A
Reverse leakage current
Junction capacitance
Series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
TYP.
-
-
-
-
-
-
520
8.0
-
MAX.
0.72
0.85
0.58
0.69
65
4
-
-
10 000
µA
mA
pF
nH
V/µs
V
UNITS
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
2
°C/W
0.5
2
0.07
6 (5)
12 (10)
8TT100
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94536
Revision: 15-Apr-08
8TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 8 A
100
Reverse Current - I
R
(mA)
100
175°C
10
150°C
125C
100°C
0.1
0.01
0.001
0.0001
0
10
20
30
40
50
60
75°C
50°C
25°C
Tj = 175°C
1
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - C
T
(pF)
Tj = 125°C
100
Tj = 25°C
1
0.0
0.5
1.0
1.5
2.0
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
20
40
60
80
100
120
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
1
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
t
1
, Rectangular Pulse Duration (Seconds)
1E+00
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94536
Revision: 15-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
7
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
6
5
4
3
2
1
0
170
DC
180°
120°
90°
60°
30°
DC
160
Square wave (D=0.50)
80% rated Vr applied
see note (1)
150
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94536
Revision: 15-Apr-08
8TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 8 A
100
Avalanche Current (A)
Tj = 25°C
10
Tj = 125°C
1
Tj = 175°C
0.1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
10
Tj = 25°C
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94536
Revision: 15-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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