MOSFET DUAL N-Channel PowerTrench MOSFET
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ON Semiconductor(安森美) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | Power-56-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 16 A, 18 A |
Rds On - Drain-Source Resistance | 5.8 mOhms, 3.4 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.7 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 19 nC, 31 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Dual Asymmetric Triple Drain Triple Source |
Pd-功率耗散 Pd - Power Dissipation | 2.3 W, 1 W |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
高度 Height | 1.1 mm |
长度 Length | 6 mm |
Transistor Type | 2 N-Channel |
宽度 Width | 5 mm |
Forward Transconductance - Min | 63 S, 84 S |
Fall Time | 1.4 ns, 2.2 ns |
Rise Time | 1.7 ns, 3 ns |
工厂包装数量 Factory Pack Quantity | 3000 |
Typical Turn-Off Delay Time | 19 nS, 24 nS |
Typical Turn-On Delay Time | 7.7 nS, 9.5 nS |
单位重量 Unit Weight | 0.003175 oz |
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