Freescale Semiconductor
Technical Data
Document Number: MRF7S19170H
Rev. 2, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 50 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
≃
170 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
MRF7S19170HR3
MRF7S19170HSR3
1930-
-1990 MHz, 50 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465B-
-03, STYLE 1
NI-
-880
MRF7S19170HR3
CASE 465C-
-02, STYLE 1
NI-
-880S
MRF7S19170HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 72°C, 25 W CW
Symbol
R
θJC
Value
(2,3)
0.25
0.31
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008, 2011. All rights reserved.
MRF7S19170HR3 MRF7S19170HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 372
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.72 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.9
703
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4
0.1
2
2.7
5.4
0.15
2.7
—
7.6
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 50 W Avg., f = 1987.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16
29
5.7
—
—
17.2
32
6.2
--37.5
--16
19
—
—
--35
--9
dB
%
dB
dBc
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19170HR3 MRF7S19170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 170 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 170 W CW
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 170 W CW
Average Group Delay @ P
out
= 170 W CW, f = 1960 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 170 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
VBW
—
25
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 1930--1990 MHz Bandwidth
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
0.5
2.06
4.7
16
0.015
0.01
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dB/°C
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
R1
R2
Z20
V
SUPPLY
+
C5
C4
C3
Z7
C8
C15
C16
C19
C6
R3
RF
INPUT Z1
Z2
Z3
Z4
C7
C1
C2
Z5
Z6
Z8
DUT
Z9
Z10 Z11
Z12 Z13
Z14
Z15
Z16 Z17
Z18
RF
OUTPUT
Z19
C10
C11
C14
Z21
C13
C12
C9
C17
C18
Z1*
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
0.588″ x 0.083″ Microstrip
0.146″ x 0.083″ Microstrip
0.068″ x 0.083″ Microstrip
0.865″ x 0.098″ Microstrip
0.154″ x 0.098″ Microstrip
0.271″ x 0.787″ Microstrip
1.410″ x 0.080″ Microstrip
0.194″ x 0.787″ Microstrip
0.115″ x 1.360″ Microstrip
0.230″ x 1.360″ Microstrip
0.185″ x 1.120″ Microstrip
Z12
Z13*
Z14*
Z15*
Z16*
Z17, Z18
Z19
Z20, Z21
PCB
0.060″ x 0.420″ Microstrip
0.197″ x 0.083″ Microstrip
0.332″ x 0.083″ Microstrip
0.158″ x 0.083″ Microstrip
0.572″ x 0.083″ Microstrip
0.063″ x 0.220″ Microstrip
0.160″ x 0.083″ Microstrip
1.120″ x 0.080″ Microstrip
Taconic TLX--0300, 0.030″,
ε
r
= 2.5
* Variable for tuning
Figure 1. MRF7S19170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19170HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2
C3, C8, C9, C10, C11
C4
C5
C6, C15, C16, C17, C18
C7
C12
C13
C14
C19
R1, R2
R3
Description
1.8 pF Chip Capacitors
8.2 pF Chip Capacitors
100 pF Chip Capacitor
100 nF Chip Capacitor
10
μF
Chip Capacitors
0.5 pF Chip Capacitor
1.5 pF Chip Capacitor
0.3 pF Chip Capacitor
0.8 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor, Axial
10 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B1R8BT500XT
ATC100B8R2CT500XT
ATC100B101JT500XT
200B104MT
C5750X5R1H106MT
ATC100B0R5BT500XT
ATC100B1R5BT500XT
ATC100B0R3BT500XT
ATC100B0R8BT500XT
EKME630ELL471M12X25LL
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
ATC
ATC
ATC
ATC
TDK
ATC
ATC
ATC
ATC
United Chemi--Con
Vishay
Vishay
MRF7S19170HR3 MRF7S19170HSR3
4
RF Device Data
Freescale Semiconductor
R2
R1
C5
C4
C3
C6
C8
R3
C15
C19
C16
C10
CUT OUT AREA
C7
C1 C2
C11
C14
C13 C12
C9
C17
C18
MRF7S19170H
Rev 0
Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout
MRF7S19170HR3 MRF7S19170HSR3
RF Device Data
Freescale Semiconductor
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
