IRFH5007PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
75
5.9
65
1.2
100
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
h
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Features and Benefits
Features
Low R
DSon
(≤ 5.9mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enables Better Thermal Dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFH5007PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH5007TRPBF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
mb
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
75
±20
17
13
100
88
Units
V
h
A
g
Power Dissipation
g
c
400
3.6
156
0.029
-55 to + 150
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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May 19, 2015
IRFH5007PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
75
–––
–––
2.0
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.09
5.1
–––
-8.4
–––
–––
–––
–––
–––
65
11
4.5
20
29.5
24.5
21
1.2
10
14
30
11
4290
510
210
Conditions
Max. Units
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
5.9
mΩ V
GS
= 10V, I
D
= 50A
4.0
V
V
DS
= V
GS
, I
D
= 150μA
––– mV/°C
V
DS
= 75V, V
GS
= 0V
20
μA
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
250
V
GS
= 20V
100
nA
V
GS
= -20V
-100
–––
S V
DS
= 15V, I
D
= 50A
98
–––
V
DS
= 38V
V
GS
= 10V
–––
nC
–––
I
D
= 50A
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 38V, V
GS
= 10V
I
D
= 50A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
250
50
Conditions
MOSFET symbol
showing the
integral reverse
G
S
pF
Avalanche Characteristics
E
AS
I
AR
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
100
A
400
h
D
Ã
–––
–––
1.3
V
–––
31
47
ns
–––
170
255
nC
Time is dominated by parasitic Inductance
Parameter
Typ.
0.5
–––
–––
–––
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 38V
di/dt = 500A/μs
e
eÃ
Thermal Resistance
Max.
0.8
15
35
22
Units
°C/W
R
θJC-mb
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Mounting Base
Junction-to-Case
Junction-to-Ambient
g
Junction-to-Ambient
g
f
2
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2015 International Rectifier
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May 19, 2015
IRFH5007PbF
1000
TOP
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
3.75V
1000
TOP
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.25V
4.0V
3.75V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.75V
1
3.75V
≤
60μs PULSE WIDTH
Tj = 25°C
1
10
100
1000
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1000
0.1
0.1
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
2.0
ID, Drain-to-Source Current (A)
VGS = 10V
100
10
T J = 150°C
T J = 25°C
1.5
1
VDS = 25V
≤60μs
PULSE WIDTH
2
3
4
5
6
7
1.0
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
10000
Ciss
VDS= 60V
VDS= 38V
VDS= 15V
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
May 19, 2015
IRFH5007PbF
1000
10000
1000
100
10
1
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100μsec
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
120
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.0
Limited By Package
100
ID, Drain Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 150μA
ID = 500μA
ID = 1.0mA
ID = 1.0A
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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May 19, 2015
IRFH5007PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
16
ID = 50A
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
1100
EAS , Single Pulse Avalanche Energy (mJ)
1000
900
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
6.6A
13A
BOTTOM 50A
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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©
2015 International Rectifier
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May 19, 2015
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