VS-6CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
Base
common
cathode
4
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
DPAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
DPAK (TO-252AA)
2x3A
200 V
0.9 V
See Recovery table
175 °C
Common cathode
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 159 °C
Total device, rated V
R
, T
C
= 159 °C
TEST CONDITIONS
MAX.
200
6
50
6
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 3 A
Forward voltage
V
F
I
F
= 3 A, T
J
= 125 °C
I
F
= 6 A
I
F
= 6 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1
0.9
1.2
1.08
5
100
-
-
μA
pF
nH
V
UNITS
Revision: 23-Mar-17
Document Number: 93498
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWH02FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 3 A
V
R
= 160 V
dI
F
/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
TYP.
-
19
26
3.1
4.6
30
60
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Weight
Mounting torque
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
MIN.
-65
-
-
-
6.0
(5.0)
TYP.
-
-
0.3
0.01
-
MAX.
+175
5
-
-
12
(10)
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
6CWH02FN
Case style DPAK (TO-252AA)
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 ˚C
I
R
- Reverse Current (μA)
10
150 ˚C
125 ˚C
100 ˚C
10
T
j
= 175 °C
1
T
j
= 125 °C
T
j
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
0.01
25 ˚C
0.001
0
50
100
150
200
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 23-Mar-17
Document Number: 93498
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWH02FN-M3
www.vishay.com
Vishay Semiconductors
100
C
T
- Junction Capacitance (pF)
T
J
= 25 ˚C
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
5
Average Power Loss (W)
170
DC
160
4
RMS Limit
3
150
Square
wave (D = 0.50)
rated V
R
applied
see
note
130
0
1
2
3
4
5
(1)
2
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
140
1
0
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 23-Mar-17
Document Number: 93498
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWH02FN-M3
www.vishay.com
50
I
F
= 3 A
I
F
= 6 A
1 40
120
100
I
F
= 3 A
I
F
= 6 A
V
R
= 30 V
T
J
= 125 °C
T
J
= 25 °C
Vishay Semiconductors
40
Q
rr
(nC)
V
R
= 30 V
T
J
= 125 °C
T
J
= 25 °C
100
1000
t
rr
(nC)
80
60
40
20
0
100
30
20
10
1000
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dI
F
/dt
(1)
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 23-Mar-17
Document Number: 93498
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWH02FN-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
4
5
6
7
8
-
-
-
-
-
-
-
-
6
2
C
3
W
4
H
5
02
6
FN
7
TRL
8
-M3
9
Vishay Semiconductors product
Current rating (6 = 6 A)
Center tap configuration-
Package identifier:
W = DPAK
H = hyperfast recovery
Voltage rating (02 = 200 V)
FN = TO-252AA
None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-6CWH02FN-M3
VS-6CWH02FNTR-M3
VS-6CWH02FNTRL-M3
VS-6CWH02FNTRR-M3
QUANTITY PER T/R
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
Revision: 23-Mar-17
Document Number: 93498
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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