20 A, 600 V, N-CHANNEL IGBT, TO-220AB
20 A, 600 V, N沟道 IGBT, TO-220AB
参数名称 | 属性值 |
端子数量 | 3 |
额定关断时间 | 242 ns |
最大集电极电流 | 20 A |
最大集电极发射极电压 | 600 V |
加工封装描述 | TO-220, 3 PIN |
无铅 | Yes |
欧盟RoHS规范 | Yes |
状态 | ACTIVE |
包装形状 | RECTANGULAR |
包装尺寸 | FLANGE MOUNT |
端子形式 | THROUGH-HOLE |
端子涂层 | TIN |
端子位置 | SINGLE |
包装材料 | PLASTIC/EPOXY |
结构 | SINGLE WITH BUILT-IN DIODE |
壳体连接 | ISOLATED |
元件数量 | 1 |
晶体管应用 | POWER CONTROL |
晶体管元件材料 | SILICON |
通道类型 | N-CHANNEL |
晶体管类型 | INSULATED GATE BIPOLAR |
额定导通时间 | 23 ns |
GB10NC60KD | GP10NC60KD | GF10NC60KD | STGF10NC60KD_07 | |
---|---|---|---|---|
描述 | 20 A, 600 V, N-CHANNEL IGBT, TO-220AB | 20 A, 600 V, N-CHANNEL IGBT, TO-220AB | 20 A, 600 V, N-CHANNEL IGBT, TO-220AB | 20 A, 600 V, N-CHANNEL IGBT, TO-220AB |
端子数量 | 3 | 3 | 3 | 3 |
额定关断时间 | 242 ns | 242 ns | 242 ns | 242 ns |
最大集电极电流 | 20 A | 20 A | 20 A | 20 A |
最大集电极发射极电压 | 600 V | 600 V | 600 V | 600 V |
加工封装描述 | TO-220, 3 PIN | TO-220, 3 PIN | TO-220, 3 PIN | TO-220, 3 PIN |
无铅 | Yes | Yes | Yes | Yes |
欧盟RoHS规范 | Yes | Yes | Yes | Yes |
状态 | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子涂层 | TIN | TIN | TIN | TIN |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
结构 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
壳体连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
元件数量 | 1 | 1 | 1 | 1 |
晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
通道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
晶体管类型 | INSULATED GATE BIPOLAR | INSULATED GATE BIPOLAR | INSULATED GATE BIPOLAR | INSULATED GATE BIPOLAR |
额定导通时间 | 23 ns | 23 ns | 23 ns | 23 ns |
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