PD- 94087
IRF7241
HEXFET
®
Power MOSFET
q
q
q
q
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Available in Tape & Reel
V
DSS
-40V
R
DS(on)
max (mΩ)
Ω)
41@V
GS
= -10V
70@V
GS
= -4.5V
I
D
-6.2A
-5.0A
Description
New trench HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S
1
8
7
A
D
D
D
D
S
S
G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
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1
1/26/01
IRF7241
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-40
–––
–––
–––
-1.0
8.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.03
25
45
–––
–––
–––
–––
–––
–––
53
14
3.9
24
280
210
100
3220
160
190
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
41
V
GS
= -10V, I
D
= -6.2A
mΩ
70
V
GS
= -4.5V, I
D
= -5.0A
-3.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -6.2A
-10
V
DS
= -32V, V
GS
= 0V
µA
-25
V
DS
= -32V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
80
I
D
= -6.2A
21
nC V
DS
= -32V
5.9
V
GS
= -10V
–––
V
DD
= -20V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
32
45
-2.5
A
-25
-1.2
48
68
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7241
1000
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
100
-I
D
, Drain-to-Source Current (A)
100
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
10
10
1
1
-2.70V
0.1
0.01
0.1
-2.70V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -6.2A
-I D, Drain-to-Source Current
(Α
)
10.00
T J = 150°C
1.5
1.00
1.0
T J = 25°C
0.10
0.5
0.01
2.5
3.0
3.5
VDS = -25V
20µs PULSE WIDTH
4.0
4.5
5.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7241
5000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
I
D
=
-6.2A
V
DS
= -32V
V
DS
= -20V
-V
GS
, Gate-to-Source Voltage (V)
4000
16
C, Capacitance(pF)
Ciss
3000
Coss = C + C
ds gd
12
2000
8
1000
Coss
0
1
4
Crss
0
10
100
0
20
40
60
80
100
-V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-I
SD
, Reverse Drain Current (A)
10
-I D , Drain-to-Source Current (A)
10
T
J
= 150
°
C
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
1000
1
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.1
-V
SD
,Source-to-Drain Voltage (V)
-V DS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7241
8.0
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
6.0
D.U.T.
+
V
GS
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
1
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
R
G
V
DD
5
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