BFP620F E7764
NPN Silicon Germanium RF Transistor
Preliminary data
•
High gain low noise RF transistor
•
Small package 1.4 x 0.8 x 0.59 mm
•
Outstanding noise figure
F
= 0.7 dB at 1.8 GHz
Outstanding noise figure
F
= 1.3 dB at 6 GHz
•
Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
•
Gold metallization for extra high reliability
to p v ie w
4
3
3
4
XYs
2
1
TSFP-4
A C s
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP620F E7764
Maximum Ratings
Parameter
Marking
R2s
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
TSFP-4
Value
2.3
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Value
≤
290
Unit
K/W
mW
°C
mA
Unit
V
-
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
96°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Oct-20-2003
BFP620F E7764
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 7.5 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 50 mA,
V
CE
= 1.5 V
h
FE
100
180
320
-
I
EBO
-
-
3
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
2.3
2.8
-
V
typ.
max.
Unit
2
Oct-20-2003
BFP620F E7764
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 50 mA,
V
CE
= 1.5 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 1.5 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 1.5 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 50 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB Compression point at output
I
C
= 50 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
Unit
-
-
-
-
65
0.12
0.2
0.45
-
0.2
-
-
GHz
pF
C
cb
C
ce
C
eb
F
dB
-
-
0.7
1.3
21
-
-
-
dB
G
ms
-
G
ma
-
10
-
dB
|S
21e
|
2
-
-
IP
3
-
19.5
9.5
25
-
-
-
dB
dBm
P
-1dB
-
14
-
3
Oct-20-2003
BFP620F E7764
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
0.22
1000
2
2
2
2.707
250.7
1.43
2.4
0.6
0.2
0.5
3
2
-0.0065
fA
V
-
V
-
Ω
fF
ps
A
V
ns
-
-
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
KF =
TITF2
425
0.25
50
10
3.129
0.6
0.75
10
0
0.5
128.1
-1.42
0.8
7.291E-11
1.0E-5
-
A
-
mA
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
21
1
18
1.522
2.364
0.3
1.5
124.9
1
0.52
1.078
298
-
fA
-
pA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
To avoid high complexity of the package equivalent circuit,
both emitter leads of
TSFP-4
are combined in one electrical
connection.
R
LxI
are series resistors for the inductances
L
xI
and
K
xa-yb
are the coupling coefficients between the
inductances
L
xa
and
L
yb
.
L
B0
=
L
E0
=
L
C0
=
K
B0-E0
=
K
B0-C0
=
K
E0-C0
=
C
BE
=
C
BC
=
C
CE
=
L
BI
=
R
LBI
=
L
EI
=
R
LEI
=
L
CI
=
R
LI
=
K
BI-EI
=
K
BI-CI
=
K
EI-CI
=
0.22
0.28
0.22
0.1
0.01
0.11
34
2
33
0.42
0.15
0.26
0.11
0.35
0.13
-0.05
-0.08
0.2
nH
nH
nH
-
-
-
fF
fF
fF
nH
Ω
nH
Ω
nH
Ω
-
-
-
Valid up to 6GHz
4
Oct-20-2003
BFP620F E7764
Total power dissipation
P
tot
=
ƒ(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
200
mW
10
3
160
K/W
120
100
80
60
40
20
0
0
90 105 120
°C
R
thJS
140
P
tot
10
2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
15
30
45
60
75
150
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ(t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ(V
CB
)
f
= 1MHz
0.4
pF
P
totmax
/
P
totDC
0.3
C
CB
s
0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.25
0.2
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
0
1
2
3
4
5
6
V
8
t
p
V
CB
5
Oct-20-2003
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