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IS42SM16200D-6BLI: 产品描述DRAM 32Mb 2Mx16 166MHz Mobile SDRAM; 产品类别存储; 文件大小508KB，共34页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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IS42SM16200D-6BLI在线购买

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DRAM 32Mb 2Mx16 166MHz Mobile SDRAM

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	DRAM
类型 Type	SDRAM Mobile
Data Bus Width	16 bit
Organization	2 M x 16
封装 / 箱体 Package / Case	FBGA-54
Memory Size	32 Mbit
Maximum Clock Frequency	166 MHz
Access Time	6 ns
电源电压-最大 Supply Voltage - Max	3.6 V
电源电压-最小 Supply Voltage - Min	2.7 V
Supply Current - Max	50 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
系列 Packaging	Bulk
安装风格 Mounting Style	SMD/SMT
工厂包装数量 Factory Pack Quantity	348

	IS42SM16200D-6BLI	IS42VM16200D-75BLI-TR	IS42RM16200D-6BLI-TR	IS42RM16200D-75BLI-TR	IS42VM16200D-75BLI	IS42RM16200D-75BLI	IS42VM16200D-6BLI-TR	IS42SM16200D-75BLI
描述	DRAM 32Mb 2Mx16 166MHz Mobile SDRAM	DRAM 32M, 1.8V, M-SDRAM 2Mx16, 133Mhz, RoHS	DRAM 32M, 2.5V, M-SDRAM 2Mx16, 166Mhz, RoHS	DRAM 32M, 2.5V, M-SDRAM 2Mx16, 133Mhz, RoHS	DRAM 32M, 1.8V, M-SDRAM 2Mx16, 133Mhz, RoHS	DRAM 32M, 2.5V, M-SDRAM 2Mx16, 133Mhz, RoHS	DRAM 32M, 1.8V, M-SDRAM 2Mx16, 166Mhz, RoHS	DRAM 32M, 3.3V, Mobile SDRAM, 2Mx16, 133Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
类型 Type	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile
系列 Packaging	Bulk	Reel	Reel	Reel	Reel	-	Reel	-
工厂包装数量 Factory Pack Quantity	348	2500	2500	2500	348	348	2500	-
RoHS	-	Details	Details	Details	Details	Details	Details	-
Moisture Sensitive	-	Yes	Yes	Yes	Yes	Yes	Yes	-

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