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GS816018CGT-300

产品描述1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
产品类别存储    存储   
文件大小434KB,共22页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
下载文档 详细参数 全文预览

GS816018CGT-300概述

1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

GS816018CGT-300规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompli
ECCN代码3A991.B.2.B
最长访问时间5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码R-PQFP-G100
JESD-609代码e3
长度20 mm
内存密度18874368 bi
内存集成电路类型CACHE SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量100
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织1MX18
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层PURE MATTE TIN
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

文档预览

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Preliminary
GS816018/36CT-333/300/250
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
1M x 18 and 512K x 36
18Mb Sync Burst SRAMs
333 MHz–250 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS816018/36CT operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Functional Description
Applications
The GS816018/36CT is an 18,874,368-bit (16,777,216-bit for
x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
Parameter Synopsis
-333
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
2.5
3.0
375
435
4.5
4.5
260
300
-300
2.5
3.3
335
390
5.0
5.0
230
270
-250
2.5
4.0
280
330
5.5
5.5
210
240
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.00 9/2004
1/22
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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