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GS816018T-200

产品描述1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
产品类别存储    存储   
文件大小544KB,共28页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS816018T-200概述

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816018T-200规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP, QFP100,.63X.87
针数100
Reach Compliance Codeunknow
ECCN代码3A991.B.2.B
最长访问时间6.5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
最大时钟频率 (fCLK)200 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
长度20 mm
内存密度18874368 bi
内存集成电路类型CACHE SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量100
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织1MX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.02 A
最小待机电流2.3 V
最大压摆率0.215 mA
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

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Prelimina
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow
Through
2-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.4 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
280
330
275
320
5.5
5.5
175
200
175
200
255
300
250
295
6.0
6.0
165
190
165
190
230
270
230
265
6.5
6.5
160
180
160
180
200
230
195
225
7.0
7.0
150
170
150
170
185
215
180
210
7.5
7.5
145
165
145
165
165
190
165
185
8.5
8.5
135
150
135
150
mA
mA
mA
mA
ns
ns
mA
mA
mA
mA
GS816018/32/36T-250/225/200/166/150/1
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz–133 M
2.5 V or 3.3 V V
2.5 V or 3.3 V
cycles can be initiated with either ADSP or ADSC inputs. I
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. T
Burst function need not be used. New addresses can be load
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled b
the user via the FT mode pin (Pin 14). Holding the FT mod
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising
edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write ena
(BW) input combined with one or more individual byte wri
signals (Bx). In addition, Global Write (GW) is available fo
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
Functional Description
Applications
The GS816018/32/36T is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
The GS816018/32/36T operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output nois
from the internal circuits and are 3.3 V and 2.5 V compatib
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
Rev: 2.12 3/2002
1/28
© 1999, Giga Semiconductor,
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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