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GS8160Z18T-133I

产品描述18Mb Pipelined and Flow Through Synchronous NBT SRAM
产品类别存储    存储   
文件大小434KB,共24页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS8160Z18T-133I概述

18Mb Pipelined and Flow Through Synchronous NBT SRAM

GS8160Z18T-133I规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP, QFP100,.63X.87
针数100
Reach Compliance Codecompli
ECCN代码3A991.B.2.B
最长访问时间8.5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度18874368 bi
内存集成电路类型ZBT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量100
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.03 A
最小待机电流2.3 V
最大压摆率0.165 mA
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

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GS8160Z18/36T-250/225/200/166/150/133
Commercial Temp
Industrial Temp
Features
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, meaning that in addition to the rising edge
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8160Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 100-pin TQFP package.
Functional Description
The GS8160Z18/36T is an 18Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
Parameter Synopsis
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow
Through
2-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Curr
(x18)
Curr
(x32/x36)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.4 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
280
330
275
320
5.5
5.5
175
200
175
200
255
300
250
295
6.0
6.0
165
190
165
190
230
270
230
265
6.5
6.5
160
180
160
180
200
230
195
225
7.0
7.0
150
170
150
170
185
215
180
210
7.5
7.5
145
165
145
165
165
190
165
185
8.5
8.5
135
150
135
150
mA
mA
mA
mA
ns
ns
mA
mA
mA
mA
Rev: 2.17 11/2004
1/24
© 1998, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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