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GS816136CD-300IT: 产品描述1M x 18 and 512K x 36 18Mb Sync Burst SRAMs; 产品类别存储存储; 文件大小575KB，共29页; 制造商GSI Technology; 官网地址http://www.gsitechnology.com/

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GS816136CD-300IT概述

1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

GS816136CD-300IT规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	GSI Technology
零件包装代码	BGA
包装说明	13 X 15 MM, 1 MM PITCH, FBGA-165
针数	165
Reach Compliance Code	_compli
ECCN代码	3A991.B.2.B
最长访问时间	5 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码	R-PBGA-B165
JESD-609代码	e0
长度	15 mm
内存密度	18874368 bi
内存集成电路类型	CACHE SRAM
内存宽度	36
功能数量	1
端子数量	165
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX36
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
座面最大高度	1.4 mm
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	13 mm

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Preliminary

GS816118/36CD-333/300/250

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 165-bump BGA package

1M x 18 and 512K x 36

18Mb Sync Burst SRAMs

333 MHz–250 MHz

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the

user via the FT mode pin (Pin 14). Holding the FT mode pin low

places the RAM in Flow Through mode, causing output data to

bypass the Data Output Register. Holding FT high places the

RAM in Pipeline mode, activating the rising-edge-triggered Data

Output Register.

SCD Pipelined Reads

The GS816118/36CD is a SCD (Single Cycle Deselect) pipelined

synchronous SRAM. DCD (Dual Cycle Deselect) versions are

also available. SCD SRAMs pipeline deselect commands one

stage less than read commands. SCD RAMs begin turning off

their outputs immediately after the deselect command has been

captured in the input registers.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

Sleep Mode

Low power (Sleep mode) is attained through the assertion (High)

of the ZZ signal, or by stopping the clock (CK). Memory data is

retained during Sleep mode.

Core and Interface Voltages

The GS816118/36CD operates on a 1.8 V power supply. All input

are 1.8 V compatible. Separate output power (V

DDQ

) pins are used

to decouple output noise from the internal circuits and are 1.8 V

compatible.

Functional Description

Applications

The GS816118/36CD is an 18,874,368-bit high performance

synchronous SRAM with a 2-bit burst address counter. Although

of a type originally developed for Level 2 Cache applications

supporting high performance CPUs, the device now finds

application in synchronous SRAM applications, ranging from

DSP main store to networking chip set support.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

ADV. The burst address counter may be configured to count in

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Parameter Synopsis

-333

Pipeline

3-1-1-1

tCycle

Curr

(x18)

Curr

(x32/x36)

tCycle

Curr

(x18)

Curr

(x32/x36)

2.5

3.0

375

435

4.5

280

335

-300

2.5

3.3

335

390

5.0

230

270

-250

2.5

4.0

280

330

5.5

210

240

Unit

Flow Through

2-1-1-1

Rev: 1.00 9/2004

1/29

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS816136CD-300IT相似产品对比

	GS816136CD-300IT	GS816118CD-250	GS816118C	GS816136CD-300T	GS816136CD-300I	GS816136CD-300	GS816118CD-250T	GS816118CD-250IT	GS816118CD-250I
描述	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
是否无铅	含铅	含铅	-	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	-	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	GSI Technology	GSI Technology	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
零件包装代码	BGA	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165	-	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165	13 X 15 MM, 1 MM PITCH, FBGA-165
针数	165	165	-	165	165	165	165	165	165
Reach Compliance Code	_compli	_compli	-	_compli	_compli	_compli	_compli	_compli	_compli
ECCN代码	3A991.B.2.B	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	5 ns	5.5 ns	-	5 ns	5 ns	5 ns	5.5 ns	5.5 ns	5.5 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码	R-PBGA-B165	R-PBGA-B165	-	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
JESD-609代码	e0	e0	-	e0	e0	e0	e0	e0	e0
长度	15 mm	15 mm	-	15 mm	15 mm	15 mm	15 mm	15 mm	15 mm
内存密度	18874368 bi	18874368 bi	-	18874368 bi	18874368 bi	18874368 bi	18874368 bi	18874368 bi	18874368 bi
内存集成电路类型	CACHE SRAM	CACHE SRAM	-	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	36	18	-	36	36	36	18	18	18
功能数量	1	1	-	1	1	1	1	1	1
端子数量	165	165	-	165	165	165	165	165	165
字数	524288 words	1048576 words	-	524288 words	524288 words	524288 words	1048576 words	1048576 words	1048576 words
字数代码	512000	1000000	-	512000	512000	512000	1000000	1000000	1000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	-	70 °C	85 °C	70 °C	70 °C	85 °C	85 °C
组织	512KX36	1MX18	-	512KX36	512KX36	512KX36	1MX18	1MX18	1MX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LBGA	-	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	-	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
最大供电电压 (Vsup)	2.7 V	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	-	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	-	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	-	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
端子位置	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	13 mm	13 mm	-	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm

GS816136CD-300IT

GS816136CD-300IT概述

GS816136CD-300IT规格参数

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GS816136CD-300IT相似产品对比

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