Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
R
DS(on)
(Ω)
0.025 at V
GS
= 4.5 V
0.035 at V
GS
= 2.5 V
0.033 at V
GS
= - 4.5 V
0.050 at V
GS
= - 2.5 V
I
D
(A)
7.1
6.0
- 6.2
- 5.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 2.5 Rated
• Compliant to RoHS directive 2002/95/EC
P-Channel
- 20
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top
View
8
7
6
5
D
1
D
1
D
2
D
2
D
1
S
2
G
2
G
1
S
1
D
2
P-Channel MOSFET
Ordering Information:
Si4562DY-T1-E3
(Lead (Pb)-free)
Si4562DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
± 12
7.1
5.7
40
1.7
2.0
1.3
- 55 to 150
- 6.2
- 4.9
- 40
- 1.7
P-Channel
- 20
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
Symbol
R
thJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
1
Si4562DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 7.1 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 6.2 A
V
GS
= 2.5 V, I
D
= 6.0 A
V
GS
= - 2.5 V, I
D
= - 5.0 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Sorce-Drain Reverse Recovery Tme
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 6.2 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 7.1 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 1.7 A, dI/dt = 100 A/µs
I
F
= - 1.7 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
25
22
6.5
7
4
3.5
40
27
40
32
90
95
40
45
40
40
60
50
60
50
150
150
60
70
80
80
ns
50
35
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 7.1 A
V
DS
= - 10 V, I
D
= - 6.2 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= - 1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.019
0.027
0.025
0.040
27
20
1.2
- 1.2
0.025
0.033
0.035
0.050
S
V
Ω
0.6
- 0.6
1.6
- 1.6
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70717
S09-0867-Rev. C, 18-May-09
Si4562DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 5
V
thru 3
V
2.5
V
I
D
- Drain C
u
rrent (A)
30
I
D
- Drain C
u
rrent (A)
30
40
20
2
V
10
20
T
C
= 125 °C
10
25 °C
1
V,
1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
- 55 °C
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
4000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
3200
C
iss
2400
0.06
0.04
V
GS
= 2.5
V
0.02
V
GS
= 4.5
V
1600
C
oss
800
C
rss
0.00
0
10
20
I
D
- Drain Current (A)
30
40
0
0
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 7.1 A
4
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.6
V
GS
= 4.5
V
I
D
= 7.1 A
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
3
1.2
2
1.0
1
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
3
Si4562DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.10
I
D
= 7.1 A
0.08
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
10
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
1.2
1.4
0.06
0.04
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
30
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th
)
V
ariance (
V
)
I
D
= 250
µA
Po
w
er (
W
)
0.0
24
18
- 0.2
12
- 0.4
6
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (s)
10.00
T
J
- Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
− T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 70717
S09-0867-Rev. C, 18-May-09
Si4562DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 5
V,
4.5
V,
4
V,
3.5
V
32
I
D
- Drain C
u
rrent (A)
3
V
I
D
- Drain C
u
rrent (A)
32
25 °C
24
125 °C
40
T
C
= - 55 °C
24
2.5
V
16
2
V
8
1.5
V
0
0
1
2
3
4
5
16
8
0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
4500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
3600
C
iss
0.06
V
GS
= 2.5
V
2700
0.04
V
GS
= 4.5
V
1800
0.02
900
C
oss
C
rss
0.00
0
8
16
24
32
40
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 6.2 A
R
DS(on)
- On-Resistance
(
N
ormalized)
1.6
V
GS
= 4.5
V
I
D
= 6.2 A
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
4
1.4
3
1.2
2
1.0
1
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
5
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