BTA206X-800ET
3Q Hi-Com Triac
24 February 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package. This "series ET" triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is
used where "high junction operating temperature" capability (T
j
= 150 °C) is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High junction operating temperature capability
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
Motor controls for home appliances
Refrigeration and air-conditioner compressor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 114 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
6
60
66
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
Static characteristics
WeEn Semiconductors
BTA206X-800ET
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
-
50
Typ
-
-
-
-
1.3
-
Max
10
10
10
15
1.6
-
Unit
mA
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 7 A;
Fig. 10
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 10 V/µs; gate open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 1 V/µs; gate open circuit
Dynamic characteristics
dI
com
/dt
1
-
-
A/ms
2
5
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BTA206X-800ET
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA206X-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 February 2018
2 / 13
WeEn Semiconductors
BTA206X-800ET
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
8
I
T(RMS)
(A)
6
12
003aag549
Conditions
Min
-
Max
800
6
60
66
18
100
2
5
0.5
150
150
003aag550
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
h
≤ 114 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
18
114 °C
I
T(RMS)
(A)
15
4
9
6
2
3
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 114 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA206X-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 February 2018
3 / 13
WeEn Semiconductors
BTA206X-800ET
3Q Hi-Com Triac
10
P
tot
(W)
8
003aag552
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
105
T
109.5
h(max)
(°C)
114
118.5
123
127.5
132
136.5
α = 180°
120°
90°
60°
30°
6
4
2
141
145.5
0
0
1.5
3
4.5
6
I
T(RMS)
(A)
150
7.5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
80
ITSM
(A)
60
003aag541
40
I
T
20
I
TSM
t
0
T
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA206X-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 February 2018
4 / 13
WeEn Semiconductors
BTA206X-800ET
3Q Hi-Com Triac
10
3
003aag542
I
T
I
TSM
(A)
(1)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
10
10
-2
10
-1
1
10
t
p
(ms)
10
2
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA206X-800ET
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 February 2018
5 / 13
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