PD - 95773B
Features
n
n
n
n
n
n
n
HEXFET
®
Power MOSFET
D
IRLR024ZPbF
IRLU024ZPbF
V
DSS
= 55V
R
DS(on)
= 58mΩ
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
S
I
D
= 16A
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
D-Pak
IRLR024ZPbF
I-Pak
IRLU024ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Max.
16
11
64
35
0.23
± 16
Units
A
W
W/°C
V
mJ
A
mJ
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ã
h
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
Max.
4.28
40
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
10/01/10
IRLR/U024ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
7.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.053
46
–––
–––
–––
–––
–––
–––
–––
–––
6.6
1.6
3.9
8.2
43
19
16
4.5
7.5
380
62
39
180
50
81
–––
–––
58
80
100
3.0
–––
20
250
200
-200
9.9
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
S
µA
mΩ
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 9.6A
V
GS
= 5.0V, I
D
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 9.6A
V
DS
= 55V, V
GS
= 0V
e
= 5.0A
e
= 3.0A
e
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 5.0A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 5.0A
R
G
= 28
Ω
V
GS
= 5.0V
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
16
11
16
A
64
1.3
24
17
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.6A, V
DD
= 28V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U024ZPbF
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
3.0V
1
1
3.0V
≤
60µs PULSE WIDTH
0.1
0.1
Tj = 25°C
1
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
10
0.1
1
V DS, Drain-to-Source Voltage (V)
10
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
Gfs, Forward Transconductance (S)
15
ID, Drain-to-Source Current
(Α)
T J = 175°C
10
T J = 25°C
10
TJ = 175°C
1
T J = 25°C
VDS = 10V
≤
60µs PULSE WIDTH
5
V DS = 8.0V
300µs PULSE WIDTH
0
0
2
4
6
8
10
12
14
16
0.1
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRLR/U024ZPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 5.0A
VGS , Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
1000
T J = 25°C
VGS = 0V
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U024ZPbF
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
RDS(on) , Drain-to-Source On Resistance
2.5
ID = 5.0A
VGS = 5.0V
2.0
ID, Drain Current (A)
(Normalized)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
D = 0.50
Thermal Response ( Z thJC )
1
0.20
0.10
0.05
0.1
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
Ri (°C/W)
τi
(sec)
2.354
0.000354
1.926
0.001779
τ
1
τ
2
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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