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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
PUMF11
NPN resistor-equipped transistor;
PNP general purpose transistor
Product data sheet
2002 Apr 09
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
FEATURES
•
Resistor-equipped transistor and general purpose
transistor in one package
•
100 mA collector current
•
50 V collector-emitter voltage
•
300 mW total power dissipation
•
SOT363 package; replaces two SOT323 (SC-70)
packaged devices on same PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
Power management switch for portable equipment,
e.g. cellular phone and CD player
•
Switch for regulator.
DESCRIPTION
NPN resistor-equipped transistor and a PNP general
purpose transistor in a SOT363 (SC-88) plastic package.
MARKING
TYPE NUMBER
PUMF11
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
1
Top view
TR1
R2
PUMF11
QUICK REFERENCE DATA
SYMBOL
TR1 (NPN)
V
CEO
I
O
R1
R2
TR2 (PNP)
V
CEO
I
C
I
CM
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
collector-emitter voltage
collector current (DC)
peak collector current
50
100
200
V
mA
mA
collector-emitter voltage
output current (DC)
bias resistor
bias resistor
50
100
22
47
V
mA
kΩ
kΩ
PARAMETER
MAX.
UNIT
MARKING CODE
(1)
R1∗
6
5
4
6
5
4
TR2
R1
2
3
MAM465
1
2
3
Fig.1 Simplified outline (SOT363) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2002 Apr 09
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
P
tot
T
stg
T
j
T
amb
TR1 (NPN)
V
CBO
V
CEO
V
EBO
V
i
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
TR2 (PNP)
V
CBO
V
CEO
V
EBO
I
C
I
CM
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
416
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
open emitter
open base
open collector
−
−
−
−
−
−50
−40
−5
output current (DC)
peak collector current
−
−
−
−
+40
−10
100
100
open emitter
open base
open collector
−
−
−
50
50
10
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
−
−65
−
−65
200
PARAMETER
CONDITIONS
MIN.
PUMF11
MAX.
UNIT
mW
°C
°C
°C
+150
150
+150
V
V
V
V
V
mA
mA
V
V
V
mA
mA
−100
−200
mW
UNIT
K/W
2002 Apr 09
3
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
TR1 (NPN)
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
------
-
R1
C
c
TR2 (PNP)
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
C
c
f
T
Note
1. Device mounted on an FR4 printed-circuit board.
APPLICATION INFORMATION
4
handbook, halfpage
PUMF11
PARAMETER
CONDITIONS
MIN.
−
−
−
−
80
−
−
2
15.4
1.7
TYP.
−
−
−
−
−
−
0.9
1.1
22
2.1
−
−
−
−
−
−
−
−
MAX. UNIT
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 0.3 V; I
C
= 2 mA
100
1
50
0.12
−
150
0.5
−
28.6
2.6
2.5
−100
−10
−100
−
−200
2.2
−
nA
µA
µA
mA
mV
V
V
kΩ
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
B
= 0; T
j
= 150
°C
V
EB
=
−4
V; I
C
= 0
V
CE
=
−6
V; I
C
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
V
CB
=
−12
V; I
E
= i
e
= 0; f = 1 MHz
−
−
−
−
120
−
−
pF
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
collector capacitance
transition frequency
nA
µA
nA
mV
pF
MHz
V
CE
=
−12
V; I
C
=
−2
mA; f = 100 MHz 100
3
5
RBE(ext)
RB(ext)
6
R1
2
R2
1
MHC182
Fig.3 Typical power management circuit.
2002 Apr 09
4
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