NSS40300DDR2G
Dual 40 V, 6.0 A, Low
V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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40 VOLTS
6.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 mW
COLLECTOR
7,8
2
BASE
1
EMITTER
4
BASE
3
EMITTER
COLLECTOR
5,6
•
Halide Free
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−40
−40
−7.0
−3.0
−6.0
Unit
Vdc
Vdc
Vdc
A
A
8
1
SOIC−8
CASE 751
STYLE 16
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING
8
40300
AYWWG
G
1
40300 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSS40300DDR2G
Package
SOIC−8
(Pb−Free)
Shipping
†
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
September, 2008
−
Rev. 0
1
Publication Order Number:
NSS40300D/D
NSS40300DDR2G
THERMAL CHARACTERISTICS
Characteristic
SINGLE HEATED
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED
(Note 3)
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
P
D
653
5.2
R
qJA
P
D
191
783
6.3
R
qJA
T
J
, T
stg
160
−55
to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
P
D
576
4.6
R
qJA
P
D
217
676
5.4
R
qJA
185
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Symbol
Max
Unit
1. FR−4 @ 10 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
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2
NSS40300DDR2G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−0.1
mAdc, I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−0.1
mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
=
−40
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−6.0
Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
−10
mA, V
CE
=
−2.0
V)
(I
C
=
−500
mA, V
CE
=
−2.0
V)
(I
C
=
−1.0
A, V
CE
=
−2.0
V)
(I
C
=
−2.0
A, V
CE
=
−2.0
V)
Collector
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−0.1
A, I
B
=
−0.010
A)
(I
C
=
−1.0
A, I
B
=
−0.100
A)
(I
C
=
−1.0
A, I
B
=
−0.010
A)
(I
C
=
−2.0
A, I
B
=
−0.200
A)
Base
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−1.0
A, I
B
=
−0.01
A)
Base
−Emitter
Turn−on Voltage (Note 4)
(I
C
=
−0.1
A, V
CE
=
−2.0
V)
Cutoff Frequency
(I
C
=
−100
mA, V
CE
=
−5.0
V, f = 100 MHz)
Input Capacitance (V
EB
=
−0.5
V, f = 1.0 MHz)
Output Capacitance (V
CB
=
−3.0
V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Rise (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Storage (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Fall (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
4. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
60
120
400
130
ns
ns
ns
ns
h
FE
250
220
180
150
−
−
−
−
−
−
100
−
−
380
340
300
230
−0.013
−0.075
−0.130
−0.135
−0.780
−0.660
−
250
50
−
−
−
−
V
−0.017
−0.095
−0.170
−0.170
V
−0.900
V
−0.750
MHz
−
300
65
pF
pF
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Vdc
−40
−40
−7.0
−
−
−
−
−
−
−
−
Vdc
−
Vdc
−
−0.1
−0.1
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Cibo
Cobo
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3
NSS40300DDR2G
TYPICAL CHARACTERISTICS
0.25
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.20
0.15
25°C
0.10
150°C
−55°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.30
I
C
/I
B
= 100
0.25
0.20
0.15
0.10
0.05
0
25°C
−55°C
150°C
0.05
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
700
h
FE
, DC CURRENT GAIN
600
500
400
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
−55°C
25°C
300
−55°C
(5.0 V)
200
−55°C
(2.0 V)
100
0
0.001
0.01
0.1
1
10
150°C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V
BE(on)
, BASE−EMITTER TURN−ON
VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
150°C
V
CE
=
−2.0
V
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
−55°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
100 mA
1A
2A
3A
25°C
10
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
b
, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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4
NSS40300DDR2G
TYPICAL CHARACTERISTICS
350
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
300
250
200
C
ibo
(pF)
150
100
100
90
80
70
60
50
40
30
0
5
10
15
20
25
30
35
40
C
obo
(pF)
0
1
2
3
4
5
6
V
EB
, EMITTER BASE VOLTAGE (V)
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1s
1.0
Figure 8. Output Capacitance
1 ms
10 ms
100 ms
I
C
(A)
0.1
Thermal Limit
0.01
0.001
Single Pulse Test at T
A
= 25°C
0.01
0.1
1.0
V
CE
(V
dc
)
10
100
Figure 9. Safe Operating Area
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