NST3904DXV6T1,
NSVT3904DXV6T1,
NST3904DXV6T5,
SNST3904DXV6T5
Dual General Purpose
Transistor
The NST3904DXV6T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
(3)
Q
1
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(2)
(1)
Q
2
(4)
(5)
NST3904DXV6T1
(6)
•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
AEC−Q101 Qualified and PPAP Capable
−
NSVT3904DXV6T1,
SNST3904DXV6T5
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Electrostatic Discharge
HBM
MM
Symbol
V
CEO
V
CBO
V
EBO
I
C
ESD
Value
40
60
6.0
200
>16000
>2000
Unit
Vdc
Vdc
Vdc
mAdc
V
MARKING
DIAGRAM
SOT−563
CASE 463A
PLASTIC
MA M
G
G
1
1
MA = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NST3904DXV6T1
NST3904DXV6T1G
Package
SOT−563*
SOT−563*
Shipping
†
4000/Tape &
Reel
4000/Tape &
Reel
4000/Tape &
Reel
8000/Tape &
Reel
8000/Tape &
Reel
8000/Tape &
Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NSVT3904DXV6T1G SOT−563*
NST3904DXV6T5
NST3904DXV6T5G
SOT−563*
SOT−563*
SNST3904DXV6T5G SOT−563*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 5
1
Publication Order Number:
NST3904DXV6T1/D
NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 1)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
R
qJA
Symbol
P
D
R
qJA
T
J
, T
stg
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
°C
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2
NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2) (I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
=
−
0.5 Vdc)
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
200
50
ns
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
300
−
−
1.0
2.0
0.5
0.1
100
100
1.0
3.0
−
−
−
4.0
8.0
10
12
8.0
10
400
400
40
60
5.0
4.0
MHz
pF
pF
k
W
X 10
−
4
−
mmhos
dB
h
FE
40
70
100
60
30
−
−
0.65
−
−
−
300
−
−
0.2
0.3
0.85
0.95
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
60
6.0
−
−
−
−
−
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
V
CE(sat)
Vdc
V
BE(sat)
Vdc
ns
2. Pulse Test: Pulse Width
≤
300
ms;
Duty Cycle
≤
2.0%.
10 < t
1
< 500
ms
DUTY CYCLE = 2%
+10.9 V
10 k
- 0.5 V
< 1 ns
C
s
< 4 pF*
- 9.1 V′
* Total shunt capacitance of test jig and connectors
< 1 ns
275
10 k
0
1N916
C
s
< 4 pF*
+3 V
+10.9 V
275
DUTY CYCLE = 2%
300 ns
+3 V
t
1
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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3
NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
5.0
C
ibo
3.0
2.0
C
obo
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
500
300
200
100
70
50
30
20
10
7
5
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
2.0 V
50 70 100
200
40 V
15 V
10
7
5
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Turn
−On
Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
500
300
200
Figure 5. Rise Time
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
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NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
Figure 9. Noise Figure
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
h fe , CURRENT GAIN
200
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 10. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
10
7.0
5.0
3.0
2.0
Figure 11. Output Admittance
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 12. Input Impedance
Figure 13. Voltage Feedback Ratio
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