IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to T
jmax
Multiple Package Options
Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
100V
18m
42A
S
G
D- Pak
IRFR3710ZPbF
G
S
D
I- Pak
IRFU3710ZPbF
I-Pak Lead form 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
G
Gate
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
D
Drain
S
Source
Base part number
IRFU3710ZPbF
IRFR3710ZPbF
Package Type
I-Pak
D-Pak
Orderable Part Number
IRFU3710ZPbF
IRFR3710ZPbF
IRFR3710ZTRLPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS (Tested )
I
AR
E
AR
T
J
T
STG
Parameter
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient ( PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
1
2016-5-31
IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
100 –––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.088 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
15
18
m V
GS
= 10V, I
D
= 33A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
69
15
25
14
43
53
42
4.5
7.5
2930
290
180
1200
180
430
–––
20
250
200
-200
100
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
pF
–––
–––
–––
–––
S
µA
nA
nC
V
DS
= 25V, I
D
= 33A
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 33A
V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 33A
R
G
= 6.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
ns
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
35
41
Max. Units
56
A
220
1.3
53
62
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 33A,V
GS
= 0V
T
J
= 25°C ,I
F
= 33A, V
DS
= 50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
starting T
J
= 25°C, L = 0.28mH, R
G
= 25, I
AS
= 33A,V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
Refer to D-Pak package for Part Marking, Tape and Reel information
2
2016-5-31
IRFR/U3710ZPbF & IRFU3710Z-701PbF
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.0V
10
10
4.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1
60µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
1
0.1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
ID , Drain-to-Source Current
)
T J = 175°C
100
80
T J = 25°C
60
T J = 175°C
10
40
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
20
V DS = 10V
0
0
10
20
30
40
50
60
70
80
ID,Drain-to-Source Current (A)
1.0
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
2016-5-31
3
IRFR/U3710ZPbF & IRFU3710Z-701PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
12.0
ID= 33A
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 80V
VDS = 50V
VDS = 20V
10000
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
10
1
10
100
0
10
20
30
40
50
60
70
80
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10.00
10
100µsec
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
1.8
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2016-5-31
IRFR/U3710ZPbF & IRFU3710Z-701PbF
60
50
ID, Drain Current (A)
3.0
Limited By Package
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 56A
VGS = 10V
2.5
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
2.0
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
3
C
Ri (°C/W)
0.576
0.249
0.224
i
(sec)
0.000540
0.001424
0.007998
1
2
3
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-31
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