PD - 95287A
IRF7492PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
V
DSS
200V
R
DS(on)
max
79
mW
@V
GS
= 10V
I
D
3.7A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
200
± 20
3.7
3.0
30
2.5
0.02
9.5
-55 to + 150
300 (1.6mm from case )
Units
V
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
02/23/07
IRF7492PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
2.5
–––
–––
–––
–––
Typ.
–––
0.20
64
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
79
mΩ V
GS
= 10V, I
D
= 2.2A
–––
V
V
DS
= V
GS
, I
D
= 250µA
10
V
DS
= 160V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
39
9.2
15
15
13
27
14
1820
190
94
780
89
150
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 3.7A
59
I
D
= 2.2A
–––
nC
V
DS
= 100V
–––
V
GS
= 10V
–––
V
DD
= 100V
–––
I
D
= 2.2A
ns
–––
R
G
= 6.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
130
4.4
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
69
200
2.3
A
30
1.3
100
310
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.2A
di/dt = 100A/µs
D
S
2
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IRF7492PbF
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
1
BOTTOM
10
BOTTOM
5.5V
1
0.1
5.5V
0.01
0.001
0.1
1
20µs PULSE WIDTH
Tj = 25°C
0.1
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
1000
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
3.0
I
D
= 3.7A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α
)
2.5
10.00
T J = 150°C
2.0
T J = 25°C
1.00
1.5
1.0
0.10
4.0
5.0
VDS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
VGS, Gate-to-Source Voltage (V)
Tj, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7492PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C SHORTED
gs
ds
Crss = C
gd
Coss = C + C
ds
gd
12
VGS, Gate-to-Source Voltage (V)
ID= 2.2A
10
8
6
4
2
0
VDS= 160V
VDS= 100V
VDS= 40V
10000
C, Capacitance(pF)
Ciss
1000
100
Crss
Coss
10
1
10
100
1000
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID , Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
10
10
100µsec
T
J
= 150
°
C
1
T
J
= 25
°
C
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
0.1
0.2
0.4
0.6
V
GS
= 0 V
0.8
1.0
0.1
10msec
1000
V
SD
,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7492PbF
4.0
V
DS
V
GS
3.0
R
D
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
2.0
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t
1
/ t
2
+T
A
100
1000
J
= P
DM
x Z
thJA
0.02
1
0.01
10
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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