Gate Drivers 2 Amps 40V 3 Rds
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | IXYS |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP8,.25 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | R-PDSO-G8 |
| 长度 | 4.9 mm |
| 功能数量 | 2 |
| 端子数量 | 8 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 4.5/35 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.75 mm |
| 最大供电电压 | 35 V |
| 最小供电电压 | 4.5 V |
| 标称供电电压 | 18 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 3.9 mm |
| IXDF402SIA | IXDN402SI | IXDF402PI | IXDI402SIA | |
|---|---|---|---|---|
| 描述 | Gate Drivers 2 Amps 40V 3 Rds | Gate Drivers 2 Amps 40V 3 Rds | Gate Drivers 2 Amps 40V 3 Rds | Gate Drivers 2 Amps 40V 3 Rds |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | IXYS | IXYS | IXYS | IXYS |
| 零件包装代码 | SOIC | SOIC | DIP | SOIC |
| 包装说明 | SOP, SOP8,.25 | SOP, SOP8,.25 | DIP, DIP8,.3 | SOP, SOP8,.25 |
| 针数 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | compliant | compliant | not_compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 |
| 长度 | 4.9 mm | 4.9 mm | 9.59 mm | 4.9 mm |
| 功能数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | SOP | DIP | SOP |
| 封装等效代码 | SOP8,.25 | SOP8,.25 | DIP8,.3 | SOP8,.25 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 电源 | 4.5/35 V | 4.5/35 V | 4.5/35 V | 4.5/35 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.75 mm | 1.75 mm | 4.57 mm | 1.75 mm |
| 最大供电电压 | 35 V | 35 V | 35 V | 35 V |
| 最小供电电压 | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 | 18 V | 18 V | 18 V | 18 V |
| 表面贴装 | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 35 | NOT SPECIFIED |
| 宽度 | 3.9 mm | 3.9 mm | 7.62 mm | 3.9 mm |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| IXDF602SIA | IXYS | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012AA, SOIC-8 |
| IXDF602SIA | Littelfuse | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012AA, SOIC-8 |
| IXDF602SIATR | Littelfuse | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012AA, SOIC-8 |
| IXDF602SIATR | IXYS | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012AA, SOIC-8 |
| IXDF602SI | IXYS | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDF602SI | Littelfuse | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012BA, SOIC-8 |
| IXDF602SITR | Littelfuse | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012BA, SOIC-8 |
| IXDF402SI | IXYS | Buffer/Inverter Based MOSFET Driver, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8 |
| IXDF602SITR | IXYS | Buffer/Inverter Based MOSFET Driver, 2A, PDSO8, MS-012BA, SOIC-8 |
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