IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
D2
PA
K
BYV29B-500
Ultrafast power diode
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package.
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward volt drop
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
Surface mountable package
1.3 Applications
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse voltage
average forward current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
123 °C; see
Figure 1;
see
Figure 2
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C; see
Figure 7;
see
Figure 6
Conditions
Min
-
-
Typ
-
-
Max
500
9
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
reverse recovery time
-
-
0.9
50
1.03
60
V
ns
Dynamic characteristics
NXP Semiconductors
BYV29B-500
Ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
n.c.
K
A
K
no connection
cathode
[1]
anode
mounting base; cathode
2
1
3
mb
K
A
001aaa020
Simplified outline
Graphic symbol
SOT404 (D2PAK)
[1]
it is not possible to make a connection to Pin 2 of the SOT404 package
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV29B-500
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
123 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
123 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
500
500
500
9
18
100
110
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV29B-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 April 2012
2 of 11
NXP Semiconductors
BYV29B-500
Ultrafast power diode
16
P
tot
(W)
12
0.5
003aaj587
12
P
tot
(W)
2.2
8
2.8
4.0
003aaj588
δ=1
a = 1.57
1.9
0.2
8
0.1
4
4
0
0
4
8
12
I
F(AV)
(A)
16
0
0
2
4
6
8
10
I
F(AV)
(A)
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV29B-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 April 2012
3 of 11
NXP Semiconductors
BYV29B-500
Ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient free
air
Conditions
see
Figure 3
in free air
[1]
Min
-
-
Typ
-
50
Max
2.5
-
Unit
K/W
K/W
[1]
Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV29B-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 April 2012
4 of 11
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