Datasheet> 器件分类 > 半导体> 分立半导体> TN2640N3-P002

TN2640N3-P002: 产品描述MOSFET 400V 5Ohm; 产品类别半导体分立半导体; 文件大小323KB，共2页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

下载文档详细参数选型对比全文预览

TN2640N3-P002在线购买

供应商	器件名称	价格	最低购买	库存
	TN2640N3-P002	-	-	点击查看	点击购买

TN2640N3-P002概述

MOSFET 400V 5Ohm

TN2640N3-P002规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Microchip(微芯科技)
产品种类 Product Category	MOSFET
RoHS	N
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	400 V
Id - Continuous Drain Current	2 A
Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	20 V
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	1 W
Channel Mode	Enhancement
高度 Height	5.33 mm
长度 Length	5.21 mm
产品 Product	MOSFET Small Signal
Transistor Type	1 N-Channel
类型 Type	FET
宽度 Width	4.19 mm
Fall Time	22 ns
Rise Time	15 ns
工厂包装数量 Factory Pack Quantity	2000
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	4 ns
单位重量 Unit Weight	0.007760 oz

文档预览

下载PDF文档

全文
预览

Product

Summary

Sheet

Applications:

TN2640

N-Channel Enhancement-Mode DMOS FET

►

DC-DC converters

►

Solid state relays

►

Ultrasound pulsers

►

Telecom switches

►

Photo voltaic drivers

►

Analog switches

10V

90%

10%

(ON)

VDD

Pulse

Generator

OUTPUT

INPUT

(OFF)

d(OFF)

10%

90%

GEN

d(ON)

VDD

OUTPUT

10%

INPUT

D.U.T.

Switching Waveform and Test Circuit

3-Lead TO-252 (K4)

Product Overview:

TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching

speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET.

It’s D-Pak package gives designers the flexibility to use the device in a wide range of power

switching and amplifying applications. It has a high breakdown voltage (400V), a low on-

resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding

these features into the D-Pak package increases the power dissipation capability to 2.5W in

small footprints utilizing surface mount technology. It’s low input and output leakage feature

improves standby power dissipation while minimizing signal attenuation.

8-Lead SOIC (LG)

Features:

Low threshold — 2.0V max.

High input impedance

Low input capacitance

Benefits:

Can be operated directly from logic level input signals.

Eliminates the need for a level translator.

Eliminates the need to supply DC current into the

gate.

Improves overall efficiency.

Maximizes switching speed to help improve overall

efficiency.

Improves overall efficiency

Maximizes efficiency, minimizes power dissipation.

Improves overall reliability.

Improves measurement accuracy. Minimizes signal

attenuation.

Increases the power dissipation capability for surface

mount technology to 2.5W.

3-Lead TO-92 (N3)

Fast switching speeds

Low on resistance

Free from secondary breakdown

compared to bipolar transistors

Low input and output leakage

Addition of D-Pak option

120711

TN2640N3-P002相似产品对比

	TN2640N3-P002	TN2640N3-P014	TN2640N3-G	TN2640LG	TN2640N3-G P014
描述	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute	Attribute Value	Attribute Value	-	Attribute Value	-
制造商 Manufacturer	Microchip(微芯科技)	Microchip(微芯科技)	-	Microchip(微芯科技)	-
产品种类 Product Category	MOSFET	MOSFET	-	MOSFET	-
RoHS	N	N	-	N	-
技术 Technology	Si	Si	-	Si	-
安装风格 Mounting Style	Through Hole	Through Hole	-	SMD/SMT	-
封装 / 箱体 Package / Case	TO-92-3	TO-92-3	-	SOIC-8	-
Number of Channels	1 Channel	1 Channel	-	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-	N-Channel	-
Vds - Drain-Source Breakdown Voltage	400 V	400 V	-	400 V	-
Id - Continuous Drain Current	2 A	2 A	-	260 mA	-
Rds On - Drain-Source Resistance	5 Ohms	5 Ohms	-	5 Ohms	-
Vgs - Gate-Source Voltage	20 V	20 V	-	20 V	-
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C	-	- 55 C	-
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	-	+ 150 C	-
Configuration	Single	Single	-	Single Quad Drain	-
Pd-功率耗散 Pd - Power Dissipation	1 W	1 W	-	1.3 W	-
Channel Mode	Enhancement	Enhancement	-	Enhancement	-
高度 Height	5.33 mm	5.33 mm	-	1.65 mm	-
长度 Length	5.21 mm	5.21 mm	-	4.9 mm	-
产品 Product	MOSFET Small Signal	MOSFET Small Signal	-	MOSFET Small Signal	-
Transistor Type	1 N-Channel	1 N-Channel	-	1 N-Channel	-
宽度 Width	4.19 mm	4.19 mm	-	3.9 mm	-
Fall Time	22 ns	22 ns	-	15 ns	-
Rise Time	15 ns	15 ns	-	15 ns	-
工厂包装数量 Factory Pack Quantity	2000	2000	-	2500	-
Typical Turn-Off Delay Time	20 ns	20 ns	-	20 ns	-
Typical Turn-On Delay Time	4 ns	4 ns	-	4 ns	-
单位重量 Unit Weight	0.007760 oz	0.007760 oz	-	0.017870 oz	-

TN2640N3-P002

TN2640N3-P002在线购买

TN2640N3-P002概述

TN2640N3-P002规格参数

文档预览

TN2640N3-P002相似产品对比

推荐资源