NST3946DXV6T1G,
NST3946DXV6T5G
Complementary General
Purpose Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
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•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−563
CASE 463A
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
NST3946DXV6T1*
(6)
Table 1. MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
(NPN)
(PNP)
Collector
−Base
Voltage
(NPN)
(PNP)
Emitter
−Base
Voltage
(NPN)
(PNP)
Collector Current
−
Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
V
CEO
Value
40
−40
Vdc
60
−40
Vdc
6.0
−5.0
mAdc
200
−200
HBM>16000,
MM>2000
V
Unit
Vdc
*Q1 PNP
Q2 NPN
V
CBO
MARKING DIAGRAM
V
EBO
46 MG
G
I
C
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ESD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
†
4,000/Tape & Reel
8,000/Tape & Reel
NST3946DXV6T1G SOT−563
(Pb-Free)
NST3946DXV6T5G SOT−563
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 2
1
Publication Order Number:
NST3946DXV6T1/D
NST3946DXV6T1G, NST3946DXV6T5G
Table 2. THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25°C
R
qJA
Symbol
P
D
T
A
= 25°C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
(I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
(I
E
=
−10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
=
−0.1
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−50
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
(NPN)
h
FE
40
70
100
60
30
60
80
100
60
30
V
CE(sat)
−
−
−
−
V
BE(sat)
0.65
−
−0.65
−
−
−
300
−
−
−
−
300
−
−
0.2
0.3
−0.25
−0.4
0.85
0.95
−0.85
−0.95
Vdc
Vdc
−
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
V
(BR)CEO
40
−40
60
−40
6.0
−5.0
−
−
−
−
−
−
−
−
−
−
50
−50
50
−50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
Vdc
I
BL
nAdc
I
CEX
nAdc
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
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2
NST3946DXV6T1G, NST3946DXV6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (continued)
Characteristic
SMALL- SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
=
−5.0
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(V
EB
=
−0.5
Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
Ω,
f = 1.0 kHz)
(V
CE
=
−5.0
Vdc, I
C
=
−100
mAdc,
R
S
= 1.0 k
Ω,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
=
−
0.5 Vdc)
(V
CC
=
−3.0
Vdc, V
BE
= 0.5 Vdc)
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(I
C
=
−10
mAdc, I
B1
=
−1.0
mAdc)
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(V
CC
=
−3.0
Vdc, I
C
=
−10
mAdc)
Fall Time
(I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
=
−1.0
mAdc)
2. Pulse Test: Pulse Width
≤
300
μs;
Duty Cycle
≤
2.0%.
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
t
d
−
−
−
−
−
−
−
−
35
35
35
35
200
225
50
75
ns
ns
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
f
T
300
250
−
−
−
−
1.0
2.0
0.5
0.1
100
100
1.0
3.0
−
−
−
−
4.0
4.5
8.0
10.0
10
12
8.0
10
400
400
40
60
5.0
4.0
MHz
Symbol
Min
Max
Unit
C
obo
pF
C
ibo
pF
h
ie
k
Ω
h
re
X 10
−
4
h
fe
−
h
oe
mmhos
NF
dB
t
r
t
s
t
f
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3
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
+3 V
+10.9 V
10 k
0
- 0.5 V
< 1 ns
C
s
< 4 pF*
- 9.1 V′
< 1 ns
1N916
C
s
< 4 pF*
275
+3 V
+10.9 V
275
10 k
DUTY CYCLE = 2%
300 ns
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
CAPACITANCE (pF)
5.0
C
ibo
3.0
2.0
C
obo
(NPN)
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
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4
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
500
300
200
100
70
50
30
20
10
7
5
(NPN)
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
40 V
15 V
10
2.0 V
50 70 100
200
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
Figure 5. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
(NPN
)
10
20
40
100
R
S
, SOURCE RESISTANCE (k OHMS)
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
(NPN)
10
f, FREQUENCY (kHz)
Figure 8. Noise Figure
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5
Figure 9. Noise Figure
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