PD - 96125A
IRF7313QPbF
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Advanced Process Technology
Ultra Low On-Resistance
Dual N- Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
HEXFET
®
Power MOSFET
S1
G1
S2
G2
1
2
8
7
D1
D1
D2
D2
V
DSS
= 30V
R
DS(on)
= 0.029Ω
3
4
6
5
Description
These HEXFET
®
Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
Top View
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
5.8
-55 to + 150
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
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08/02/10
IRF7313QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
1.0
Typ. Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
0.022 V/°C Reference to 25°C, I
D
= 1mA
0.023 0.029
V
GS
= 10V, I
D
= 5.8A
Ω
0.032 0.046
V
GS
= 4.5V, I
D
= 4.7A
V
V
DS
= V
GS
, I
D
= 250µA
14
S
V
DS
= 15V, I
D
= 5.8A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
22
33
I
D
= 5.8A
2.6 3.9
nC V
DS
= 15V
6.4 9.6
V
GS
= 10V, See Fig. 10
8.1
12
V
DD
= 15V
8.9
13
I
D
= 1.0A
ns
26
39
R
G
= 6.0Ω
17
26
R
D
= 15Ω
650
V
GS
= 0V
320
pF
V
DS
= 25V
130
= 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
2.5
A
30
1.0
68
87
V
ns
nC
0.78
45
58
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 10mH
R
G
= 25Ω, I
AS
= 4.0A.
I
SD
≤
4.0A, di/dt
≤
74A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
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2
IRF7313QPbF
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
SD
, Reverse Drain Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
3.0
3.5
4.0
V
DS
= 10V
20µs PULSE WIDTH
4.5
5.0
A
1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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IRF7313QPbF
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.8A
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2.0
0.040
1.5
0.036
V
GS
= 4.5V
0.032
1.0
0.028
0.5
0.024
V
GS
= 10V
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
0.020
0
10
20
30
40
A
T
J
, Junction Temperature (
°
C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS
(on) , Drain-to-Source On Resistance (Ω)
E
AS
, Single Pulse Avalanche Energy (mJ)
0.12
200
TOP
160
0.10
BOTTOM
I
I
D
D
1.8A
3.2A
4.0A
0.08
120
0.06
I
D
= 5.8A
0.04
80
0.02
40
0.00
0
3
6
9
12
15
A
0
25
50
75
100
125
150
A
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (°C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
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4
IRF7313QPbF
1200
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 5.8A
V
DS
= 15V
C, Capacitance (pF)
900
16
C
iss
C
oss
12
600
8
300
C
rss
4
0
1
10
100
A
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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