IRFH5215PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
150
58
21
2.3
27
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
•
•
•
Primary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
Features and Benefits
Features
Low RDSon (< 58 mΩ)
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5215TRPBF
IRFH5215TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
EOL notice #259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
150
± 20
5.0
4.0
27
17
108
3.6
104
0.029
-55 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes
through
are on page 9
1
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
March 16, 2015
IRFH5215PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.19
45.5
–––
-12
–––
–––
–––
–––
–––
21
7.2
2.2
6.7
4.9
8.9
10
2.3
6.7
6.3
11
2.9
1350
120
30
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250uA
––– V/°C Reference to 25°C, I
D
= 1.0mA
58
mΩ V
GS
= 10V, I
D
= 16A
5.0
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
20
V
DS
= 150V, V
GS
= 0V
μA
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
250
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 50V, I
D
= 16A
32
–––
V
DS
= 75V
V
GS
= 10V
–––
nC
I
D
= 16A
–––
–––
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 75V, V
GS
= 10V
I
D
= 16A
R
G
=1.3Ω
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
Max.
96
16
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
Typ.
–––
–––
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
27
A
108
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 75V
di/dt = 500A/μs
D
Ã
–––
–––
1.3
V
–––
40
60
ns
–––
370
555
nC
Time is dominated by parasitic Inductance
Parameter
Typ.
–––
–––
–––
–––
e
S
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
g
g
Max.
1.2
15
35
22
Units
°C/W
2
www.irf.com© 2015 International Rectifier
Submit Datasheet Feedback
March 16, 2015
IRFH5215PbF
1000
1000
≤
60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
ID, Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
≤
60μs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
0.1
5.0V
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
5.0V
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 16A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
2.0
1.5
1.0
1
VDS = 50V
≤60μs
PULSE WIDTH
2
4
6
8
10
12
14
16
0.5
0.1
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 16A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
1000
Ciss
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
www.irf.com
©
2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
March 16, 2015
Submit Datasheet Feedback
IRFH5215PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
10msec
100μsec
100
10
TJ = 150°C
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
30
25
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
6.0
5.0
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
4.0
ID = 100μA
ID = 250μA
3.0
ID = 1.0mA
ID = 10mA
2.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com© 2015 International Rectifier
Submit Datasheet Feedback
March 16, 2015
IRFH5215PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
130
EAS , Single Pulse Avalanche Energy (mJ)
400
120
110
100
90
80
70
60
50
40
TJ = 25°C
TJ = 125°C
ID = 16A
350
300
250
200
150
100
50
0
ID
TOP
2.0A
4.9A
BOTTOM 16A
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VGS, Gate -to -Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
March 16, 2015
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
