PD- 95598A
IRG4IBC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak
TM
outline
• Lead-Free
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.95V
@V
GE
= 15V, I
C
= 12A
n-channel
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLP
AK
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
Visol
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
8.9
68
68
8.5
92
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
4.1
65
–––
Units
°C/W
g (oz)
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1
06/17/2010
IRG4IBC30UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltageƒ
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min.
600
–––
–––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
3.1
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.63
1.95
2.52
2.09
–––
-11
8.6
–––
–––
1.4
1.3
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA
2.1
I
C
= 12A
V
GE
= 15V
–––
V
I
C
= 23A
See Fig. 2, 5
–––
I
C
= 12A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 250µA
–––
S
V
CE
= 100V, I
C
= 12A
250
µA
V
GE
= 0V, V
CE
= 600V
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 12A
See Fig. 13
1.6
I
C
= 12A, T
J
= 150°C
±100 nA
V
GE
= ±20V
V
GE(th)
∆
V
GE(th)
/
∆
T
J
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
50
8.1
18
40
21
91
80
0.38
0.16
0.54
40
22
120
180
0.89
7.5
1100
73
14
42
80
3.5
5.6
80
220
180
120
Max. Units
Conditions
75
I
C
= 12A
12
nC
V
CC
= 400V
See Fig. 8
27
V
GE
= 15V
–––
T
J
= 25°C
–––
ns
I
C
= 12A, V
CC
= 480V
140
V
GE
= 15V, R
G
= 23Ω
130
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.9
–––
T
J
= 150°C, See Fig. 9, 10, 11, 18
–––
ns
I
C
= 12A, V
CC
= 480V
–––
V
GE
= 15V, R
G
= 23Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
See Fig. 7
–––
ƒ = 1.0MHz
60
ns
T
J
= 25°C See Fig.
120
T
J
= 125°C
14
I
F
= 12A
6.0
A
T
J
= 25°C See Fig.
10
T
J
= 125°C
15
V
R
= 200V
180
nC
T
J
= 25°C See Fig.
600
T
J
= 125°C
16
di/dt 200A/µs
––– A/µs T
J
= 25°C See Fig.
–––
T
J
= 125°C
17
2
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IRG4IBC30UDPbF
12
For both:
10
LOAD CURRENT (A)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
13
W
8
Square wave:
60% of rated
voltage
I
6
4
Ideal diodes
2
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
0.1
5
6
7
8
V
CC
= 10V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IBC30UDPbF
20
3.0
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current(A)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 24A
16
2.5
12
8
I
C
= 12A
2.0
4
I
C
= 6.0A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
150
1.5
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30UDPbF
2000
C, Capacitance (pF)
1600
V
GE
, Gate-to-Emitter Voltage (V)
A
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 12A
16
C
ies
1200
12
800
C
oes
C
res
8
400
4
0
1
10
0
0
10
20
30
40
A
50
100
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.60
10
Total Switchig Losses (mJ)
0.58
Total Switchig Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 12A
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 24A
0.56
1
I
C
= 12A
I
C
= 6.0A
0.54
0.52
0.50
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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