Datasheet
AC/DC Drivers
PWM type DC/DC converter IC
Included 650V MOSFET
BM2PXX4 Series
●
General
The PWM type DC/DC converter (BM2PXX4) for
AC/DC provide an optimum system for all products
that include an electrical outlet.
BM2PXX4 supports both isolated and non-isolated
devices, enabling simpler design of various types of
low-power electrical converters.
BM2PXX4 built in a HV starter circuit that tolerates
650V, it contributes to low-power consumption.
With current detection resistors as external devices, a
higher degree of design freedom is achieved. Since
current mode control is utilized, current is restricted in
each cycle and excellent performance is demonstrated
in bandwidth and transient response.
The switching frequency is 65 kHz. At light load, the
switching frequency is reduced and high efficiency is
achieved.
A frequency hopping function is also on chip, which
contributes to low EMI.
We can design easily, because BM2PXX4 includes
the switching MOSFET.
●
Features
PWM frequency : 65kHz
PWM current mode method
Burst operation when load is light
Frequency reduction function
Built-in 650V start circuit
Built-in 650V switching MOSFET
VCC pin under voltage protection
VCC pin overvoltage protection
SOURCE pin Open protection
SOURCE pin Short protection
SOURCE pin Leading-Edge-Blanking function
Per-cycle over current protection circuit
Soft start
Secondary Over current protection circuit
●Package
DIP7
9.20mm×6.35mm×4.30mm pitch 2.54mm
(Typ.)
(Typ.) (Max.)
(Typ.)
●Basic
specifications
Operating Power Supply Voltage Range:
VCC 8.9V to 26.0V DRAIN：½650V
Operating Current: Normal Mode
BM2P014: 0.950mA (Typ.)
BM2P034: 0.775mA (Typ.)
BM2P054: 0.600mA (Typ.)
BM2P094: 0.500mA (Typ.)
Burst Mode: 0.400mA (Typ.)
Oscillation Frequency:
65kHz (Typ.)
o
o
Operating Temperature:
- 40 C to +105 C
MOSFET ON Resistance:
BM2P014: 1.4Ω (Typ,)
BM2P034: 2.4Ω (Typ,)
BM2P054: 4.0Ω (Typ,)
BM2P094: 8.5Ω (Typ,)
●Application
circuit
+
AC
85
-
265Vac
FUSE
Filter
Diode
Bridge
●
Applications
AC adapters and household appliances (vacuum
cleaners, humidifiers, air cleaners, air conditioners, IH
cooking heaters, rice cookers, etc.)
●
Line Up
-
ERROR
AMP
Figure 1．Application circuit
○Product
structure：Silicon monolithic integrated circuit
.
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product is not designed protection against radioactive rays
1/18
TSZ02201-0F2F0A200070-1-2
7. Mar.2017.Rev.009
BM2PXX4
Series
Datasheet
●Absolute
Maximum Ratings（Ta=25C）
Parameter
Maximum applied voltage 1
Maximum applied voltage 2
Maximum applied voltage 3
Drain current pulse
Drain current pulse
Drain current pulse
Drain current pulse
Allowable dissipation
Symbol
V
max1
V
max2
V
max3
I
DP
I
DP
I
DP
I
DP
P
d
Rating
-0.3½30
-0.3½6.5
650
10.40
5.20
2.60
1.30
2000
Unit
V
V
V
A
A
A
A
mW
Conditions
VCC
SOURCE, FB
DRAIN
P
W
=10us, Duty cycle=1%
(BM2P014)
P
W
=10us, Duty cycle=1%
(BM2P034)
P
W
=10us, Duty cycle=1%
(BM2P054)
P
W
=10us, Duty cycle=1%
(BM2P094)
o
Operating temperature range
T
opr
-40
½
+105
C
o
MAX junction temperature
T
JMAX
150
C
o
-55
½
+150
Storage temperature range
T
str
C
(
Note1) DIP7 : When mounted (on 74.2 mm × 74.2 mm, 1.6 mm thick, glass epoxy on double-layer substrate).
Reduce to 16 mW/C when Ta = 25C or above.
●Operating
Conditions（Ta=25C）
Parameter
Power supply voltage range 1
Power supply voltage range 2
Symbol
V
CC
V
DRAIN
Rating
8.9½26.0
½650
Unit
V
V
Conditions
VCC pin voltage
DRAIN pin voltage
●Electrical
Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V)
Parameter
[MOSFET Block]
Between drain and
source voltage
Drain leak current
On resistance
On resistance
On resistance
On resistance
V
(BR)DDS
I
DSS
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
650
-
-
-
-
-
-
-
1.4
2.4
4.0
8.5
-
100
2.0
3.6
5.5
12.0
V
uA
Ω
Ω
Ω
Ω
I
D
=1mA / V
GS
=0V
V
DS
=650V / V
GS
=0V
I
D
=0.25A / V
GS
=10V
(BM2P014)
I
D
=0.25A / V
GS
=10V
(BM2P034)
I
D
=0.25A / V
GS
=10V
(BM2P054)
I
D
=0.25A / V
GS
=10V
(BM2P094)
Symbol
Specifications
Typ
Unit
Conditions
Min
Max
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TSZ22111・15・001
2/18
TSZ02201-0F2F0A200070-1-2
7. Mar.2017.Rev.009
BM2PXX4
Series
Datasheet
●Electrical
Characteristics of Control IC part (Unless otherwise noted, Ta = 25C, VCC = 15 V)
Specifications
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
[Circuit current]
BM2P014, FB=2.0V
Circuit current (ON) 1
I
ON1
700
950
1200
μA
( at pulse operation)
BM2P034, FB=2.0V
Circuit current (ON) 1
I
ON1
550
775
1050
μA
(at pulse operation)
BM2P054, FB=2.0V
Circuit current (ON) 1
I
ON1
410
600
790
μA
(at pulse operation)
BM2P094, FB=2.0V
Circuit current (ON) 1
I
ON1
350
500
650
μA
(at pulse operation)
Circuit current (ON) 2
[VCC protection function]
VCC UVLO voltage 1
VCC UVLO voltage 2
VCC UVLO hysteresis
VCC OVP voltage 1
VCC OVP voltage 2
Latch released VCC voltage
VCC Recharge start voltage
VCC Recharge stop voltage
Latch mask time
Thermal shut down temperature
[PWM type DCDC driver block]
Oscillation frequency 1
Oscillation frequency 2
Frequency hopping width 1
Hopping fluctuation frequency
Soft start time 1
Soft start time 2
Soft start time 3
Soft start time 4
Maximum duty
FB pin pull-up resistance
ΔFB
/
ΔCS
gain
FB burst voltage
FB voltage of
starting Frequency reduction mode
FB OLP voltage 1a
FB OLP voltage 1b
FB OLP ON timer
FB OLP Start up timer
FB OLP OFF timer
[Over current detection block]
Overcurrent detection voltage
Overcurrent detection voltage SS1
Overcurrent detection voltage SS2
Overcurrent detection voltage SS3
Overcurrent detection voltage SS4
Leading Edge Blanking Time
Over current detection AC Voltage
compensation factor
SOURCE pin
short protection voltage
[Start circuit block]
Start current 1
Start current 2
OFF current
Start current switching voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
I
ON2
V
UVLO1
V
UVLO2
V
UVLO3
V
OVP1
V
OVP2
V
LATCH
V
CHG1
V
CHG2
T
LATCH
T
SD
F
SW1
F
SW2
F
DEL1
F
CH
T
SS1
T
SS2
T
SS3
T
SS4
D
max
R
FB
Gain
V
BST
V
DLT
V
FOLP1A
V
FOLP1B
T
F
OLP1
T
FOLP1b
T
FOLP2
V
CS
V
CS_SS1
V
CS_SS2
V
CS_SS3
V
CS_SS4
T
LEB
K
CS
V
CSSHT
I
START1
I
START2
I
START3
V
SC
-
12.50
7.50
-
26.0
-
7.70
12.00
50
118
60
20
-
75
0.30
0.60
1.20
4.80
68.0
23
-
0.300
1.100
2.60
-
40
26
358
0.380
-
-
-
-
-
12
0.020
0.100
1.000
-
0.800
400
13.50
8.20
5.30
27.5
23.5
V
UVLO2
-0.5
8.70
13.00
100
145
65
25
4.0
125
0.50
1.00
2.00
8.00
75.0
30
4.00
0.400
1.250
2.80
2.60
64
32
512
0.400
0.100
0.150
0.200
0.300
250
20
0.050
0.500
3.000
10
1.500
500
14.50
8.90
-
29.0
-
9.70
14.00
150
-
70
30
-
175
0.70
1.40
2.80
11.20
82.0
37
-
0.500
1.400
3.00
-
88
38
666
0.420
-
-
-
-
-
28
0.080
1.000
6.000
20
2.100
μA
V
V
V
V
V
V
V
V
us
C
KHz
KHz
KHz
Hz
ms
ms
ms
ms
%
kΩ
V/V
V
V
V
V
ms
ms
ms
V
V
V
V
V
ns
mV/us
V
mA
mA
uA
V
FB=0.0V(at burst operation)
VCC rises
VCC falls
V
UVLO3=
V
UVLO1-
V
UVLO2
VCC rises
VCC falls
Control IC
FB=2.00V
FB=0.40V
FB=2.0V
FB falls
Overload is detected (FB rise)
Overload is detected (FB drop)
Ton=0us
0[ms] ~ T
SS1
[ms]
T
SS1
[ms] ~ T
SS2
[ms]
T
SS2
[ms] ~ T
SS3
[ms]
T
SS3
[ms] ~ T
SS4
[ms]
VCC= 0V
VCC=10V
Inflow current from Drain pin
after UVLO released UVLO.
When MOSFET is OFF
3/18
TSZ02201-0F2F0A200070-1-2
7. Mar.2017.Rev.009
BM2PXX4
Series
Datasheet
●PIN
DESCRIPTIONS
Table 1 Pin Description
NO.
1
2
3
4
5
6
7
Pin Name
SOURCE
N.C.
GND
FB
VCC
DRAIN
DRAIN
I/O
I/O
-
I/O
I
I
I/O
I/O
Function
MOSFET SOURCE pin
-
GND pin
Feedback signal input pin
Power supply input pin
MOSFET DRAIN pin
MOSFET DRAIN pin
ESD Diode
VCC
GND
○
○
-
-
○
-
-
○
-
○
-
-
-
-
●I/O
Equivalent Circuit Diagram
7
DRAIN
DRAIN
6
DRAIN
DRAIN
5
VCC
Internal
Circuit
Internal MOSFET
Internal
Circuit
Internal MOSFET
VCC
SOURCE
SOURCE
1
VREF
SOURCE
2
N.C.
3
GND
4
VREF
FB
SOURCE
GND
FB
R
FB
Figure 2 I/O Equivalent Circuit Diagram
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/18
TSZ02201-0F2F0A200070-1-2
7. Mar.2017.Rev.009
BM2PXX4
●Block
Diagram
Series
Datasheet
VCC
DRAIN
DRAIN
64ms
Figure 3. Block Diagram
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/18
TSZ02201-0F2F0A200070-1-2
7. Mar.2017.Rev.009
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