VS-HFA08SD60SPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
2, 4
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
TO-252AA (D-PAK)
1
N/C
3
Anode
• Guaranteed avalanche
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-252AA (D-PAK)
8A
600 V
1.4 V
18 ns
150 °C
Single die
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Peak repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
8
60
24
14
-55 to +150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 8 A
I
F
= 16 A
I
F
= 8 A, T
J
= 125 °C
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 3
Measured lead to lead 5 mm from package body
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
μA
pF
nH
V
UNITS
Revision: 22-Jun-15
Document Number: 94042
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08SD60SPbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
dI
(rec)M
/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
18
37
55
3.5
4.5
65
124
240
210
MAX.
-
55
90
5.0
8.0
138
360
-
-
A
ns
UNITS
Reverse recovery charge
nC
Rate of fall of recovery current
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction
and storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device
Case style D-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
Typical socket mount
TEST CONDITIONS
MIN.
-55
-
-
-
-
TYP.
-
-
-
2.0
0.07
MAX.
150
3.5
°C/W
80
-
-
g
oz.
UNITS
°C
HFA08SD60S
Revision: 22-Jun-15
Document Number: 94042
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08SD60SPbF
www.vishay.com
Vishay Semiconductors
1000
T
J
= 150 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
100
T
J
= 125 °C
10
1
0.1
T
J
= 25 °C
0.01
0.001
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.4
0.8
1.6
2.4
3.2
4.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Response
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 22-Jun-15
Document Number: 94042
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08SD60SPbF
www.vishay.com
80
70
60
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
500
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
Vishay Semiconductors
400
50
40
30
20
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
Q
rr
(nC)
t
rr
(ns)
300
200
100
10
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
20
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
dI
(rec)M
/dt (A/µs)
15
I
RR
(A)
10
1000
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
5
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
0
100
1000
100
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Revision: 22-Jun-15
Document Number: 94042
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA08SD60SPbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 22-Jun-15
Document Number: 94042
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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