IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-2
20F
BYV25FX-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
High thermal cycling performance
Isolated package
Low on-state losses
Low thermal resistance
Soft recovery characteristic
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
square-wave pulse;
δ
= 0.5;
T
h
≤
97 °C;
see
Figure 1;
see
Figure 2
I
F
= 5 A; T
j
= 25 °C;
see
Figure 5
I
F
= 5 A; T
j
= 150 °C;
see
Figure 5
Dynamic characteristics
t
rr
reverse recovery
time
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 6
-
17.5 35
ns
Conditions
Min
-
-
Typ
-
-
Max Unit
600
5
V
A
Static characteristics
V
F
forward voltage
-
-
1.3
1.1
1.9
1.7
V
V
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV25FX-600
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
DC
square-wave pulse;
δ
= 0.5 ;
T
h
≤
97 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
h
≤
97 °C
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
600
600
600
5
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-40
-
10
60
66
150
150
A
A
A
°C
°C
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
2 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
14
P
tot
(W)
12
10
8
6
4
0.1
0.5
003aaf430
10
P
tot
(W)
8
2.2
6
2.8
4.0
4
1.9
003aaf431
δ
=1
a = 1.57
0.2
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
V
o
= 1.499 V; R
s
= 0.041
Ω
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
V
o
= 1.499 V; R
s
= 0.041
Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aaf446
10
3
I
FSM
(A)
10
2
P
t
p
t
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
3 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Conditions
with heatsink compound;
see
Figure 4
in free air
Min
-
-
Typ
-
55
Max
5.5
-
Unit
K/W
K/W
10
Z
th(j-h)
(K/W)
1
001aaf257
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
4 of 11
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