PD - 97368A
IRFH3702PbF
Applications
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HEXFET
®
Power MOSFET
Synchronous Buck Converter for Computer
Processor Power
Isolated DC to DC Converters for Network and
Telecom
Buck Converters for Set-Top Boxes
V
DSS
30V
R
DS(on)
max
Qg
7.1m
Ω
@V
GS
= 10V 9.6nC
Benefits
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Low R
DS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
D
D
D
D
S
S
S
G
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
16
12
42
25
120
2.8
1.8
0.02
-55 to + 150
Units
V
A
c
W
W/°C
°C
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient
f
Parameter
Typ.
–––
–––
–––
Max.
6.0
45
44
Units
°C/W
gh
Junction-to-Ambient (t<10s)
h
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
www.irf.com
09/21/10
1
IRFH3702PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
5.7
8.7
1.8
-6.5
–––
–––
–––
–––
–––
9.6
2.4
1.2
3.1
2.9
4.3
7.4
2.2
9.6
15
11
5.8
1510
306
120
–––
–––
7.1
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 16A
mΩ
11.8
V
GS
= 4.5V, I
D
= 12A
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
1.0
µA
150
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 12A
e
e
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 12A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
77
12
Units
mJ
A
Avalanche Characteristics
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
17
15
3.5
A
120
1.0
26
23
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 225A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH3702PbF
1000
1000
≤
60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
≤
60µs PULSE WIDTH
Tj = 150°C
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
10
10
2.7V
2.7V
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 16A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
5
1.0
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRFH3702PbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec
10
1msec
1
T A = 25°C
100
10
T J = 150°C
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFH3702PbF
16
VGS(th) , Gate Threshold Voltage (V)
2.5
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
ID, Drain Current (A)
2.0
1.5
ID = 25µA
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1
10
100
t 1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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