VS-440CNQ030PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 440 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 150 °C T
J
operation
• Center tap module
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
TO-244
Base common
cathode
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
440 A
30 V
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
The VS-440CNQ030PbF center tap, high current, Schottky
rectifier module has been optimized for very low forward
voltage drop, with moderate leakage. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, welding
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
220 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
440
30
27 000
0.41
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-440CNQ030PbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current (fig. 5)
per
module
per leg
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 20 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 125 °C, rectangular waveform
220
A
Maximum peak one cycle non-repetitive
surge current per leg (fig. 7)
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
27 000
3000
198
44
mJ
A
VALUES
440
UNITS
Revision: 11-May-17
Document Number: 94226
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-440CNQ030PbF
www.vishay.com
Vishay Semiconductors
SYMBOL
220 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.51
0.63
0.41
0.55
20
1120
14 800
5
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
(fig. 1)
V
FM (1)
440 A
220 A
440 A
Maximum reverse leakage current per leg
(fig. 2)
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to case per module
Thermal resistance, case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-55
-
-
-
-
-
35.4 (4)
30 (3.4)
30 (3.4)
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
150
0.19
0.095
-
-
-
53.1 (6)
40 (4.6)
44.2 (5)
80
35
lbf
⋅
in
lbf
⋅
in
(N
⋅
m)
g
oz.
°C/W
UNITS
°C
I
F
- Instantaneous Forward Current (A)
1000
10 000
I
R
- Reverse Current (mA)
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 150 °C
100
T
J
= 125 °C
10
T
J
= 25 °C
1
T
J
= 25 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Revision: 11-May-17
Document Number: 94226
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-440CNQ030PbF
www.vishay.com
Vishay Semiconductors
100 000
C
T
- Junction Capacitance (pF)
10 000
T
J
= 25 °C
1000
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
P
DM
t
1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Allowable Case Temperature (°C)
160
150
Average Power Loss (W)
150
140
130
120
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
90
60
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note (2)
110
100
0
50
100
150
200
250
300
350
30
0
0
50
100
150
200
250
300
350
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
Revision: 11-May-17
Document Number: 94226
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-440CNQ030PbF
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
Vishay Semiconductors
100 000
At any rated load condition
and with rated V
RRM
applied
following surge
10 000
1000
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
44
2
-
-
-
-
-
-
-
-
0
3
C
4
N
5
Q
6
030 PbF
7
8
1
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Average current rating (x 10)
Product silicon identification
C = circuit configuration
N = not isolated
Q = Schottky rectifier diode
Voltage rating (030 = 30 V)
Lead (Pb)-free
Tube standard pack quantity: 25 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 11-May-17
Document Number: 94226
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS
in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
40 (1.57)
80 (3.15)
17.5 (0.69)
16.5 (0.65)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
1
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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