VS-ETH1506SHM3, VS-ETH1506-1HM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
TO-263AB (D
2
PAK)
Base
cathode
2
Available
TO-262AA
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
2
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-ETH1506S-M3
VS-ETH1506-1-M3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-263AB (D
2
PAK), TO-262AA
15 A
600 V
1.25 V
21 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage
temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 139 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
15
160
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.25
0.01
20
12
8.0
MAX.
-
2.45
1.6
15
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 10-Jul-15
Document Number: 94482
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506SHM3, VS-ETH1506-1HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.5 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
21
25
29
65
3.9
7.0
60
240
42
21
480
MAX.
26
36
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-263AB (D
2
PAK)
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
1.3
-
0.5
2.0
0.07
-
MAX.
175
1.51
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
ETH1506SH
ETH1506-1H
I
F
- Instantaneous Forward Current (A)
100
1000
T
J
= 175 °C
I
R
- Reverse Current (μA)
100
10
175 °C
150 °C
125 °C
1
100 °C
75 °C
50 °C
10
T
J
= 150 °C
0.1
0.01
25 °C
0.001
0.0001
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15
Document Number: 94482
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506SHM3, VS-ETH1506-1HM3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
30
RMS Limit
Average Power Loss (W)
170
160
150
140
130
120
0
2
4
6
8
10 12 14 16 18 20 22
25
20
15
10
5
0
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
DC
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Jul-15
Document Number: 94482
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506SHM3, VS-ETH1506-1HM3
www.vishay.com
100
90
500
80
70
I
F
= 15 A, 125 °C
400
I
F
= 15 A, 125 °C
600
Vishay Semiconductors
t
rr
(ns)
60
50
40
30
I
F
= 15 A, 25 °C
Q
rr
(nC)
300
200
100
I
F
= 15 A, 25 °C
20
10
100
typical value
1000
0
100
typical value
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94482
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506SHM3, VS-ETH1506-1HM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
T
3
H
4
15
5
06
6
S
7
TRL
8
H
9
M3
10
Vishay Semiconductors product
Circuit configuration
E = single diode
T = TO-220
H = Hyperfast recovery time
Current code (15 = 15 A)
6
7
8
-
-
-
-
-
-
Voltage code (06 = 600 V)
• S = D
2
PAK
• -1 = TO-262
• None = tube
• TRL = tape and reel (left oriented, for D
2
PAK package)
• TRR = tape and reel (right oriented, for D
2
PAK package)
H = AEC-Q101 qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
10
-
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-ETH1506SHM3
VS-ETH1506-1HM3
VS-ETH1506STRRHM3
VS-ETH1506STRLHM3
QUANTITY PER TUBE
50
50
800
800
MINIMUM ORDER QUANTITY
1000
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
TO-263AB (D
2
PAK)
TO-262AA
TO-263AB (D
2
PAK)
TO-262AA
TO-263AB (D
2
PAK)
www.vishay.com/doc?95046
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Revision: 10-Jul-15
Document Number: 94482
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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