d. Maximum under steady state conditions is 72 °C/W.
e. Package limited.
f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S16-0980-Rev. C, 23-May-16
Document Number: 65017
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
9
1.
m
m
Top View
D
P-Channel MOSFET
SYMBOL
V
DS
V
GS
LIMIT
-20
± 12
-8
e
-8
e
-6.7
b, c
-5.3
b, c
UNIT
V
I
D
A
I
DM
I
S
-20
-8
e
-2.9
b, c
10.9
7
3.5
b, c
2.2
b, c
-50 to 150
260
P
D
W
T
J
, T
stg
°C
Si5459DU
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V, R
L
= 1.9
I
D
-5.3 A, V
GEN
= -4.5 V, R
g
= 1
V
DD
= -10 V, R
L
= 1.9
I
D
-5.3 A, V
GEN
= -10 V, R
g
= 1
f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -6.7 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -6.7 A
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
=
-5 V, V
GS
= -10 V
V
GS
= -4.5 V, I
D
= -6.7 A
V
GS
= -2.5 V, I
D
= -1 A
V
DS
= -10 V, I
D
= -6.7 A
MIN.
-20
-
-
-0.6
-
-
-
-20
-
-
-
-
-
-
-
-
-
-
1.2
-
-
-
-
-
-
-
-
TYP.
a
-
-19
3.1
-
-
-
-
-
0.043
0.068
11
665
140
115
17
8
2
3
6
6
15
26
9
21
50
29
13
MAX.
-
-
-
-1.4
-100
-1
-10
-
0.052
0.082
-
-
-
-
26
12
-
-
12
12
23
39
18
32
75
44
20
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
-
-
-
-
-0.77
30
17
16
14
-8
-20
-1.2
45
26
-
-
A
V
ns
nC
ns
I
S
= -5.3 A
-
-
-
-
-
I
F
= -5.3 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0980-Rev. C, 23-May-16
Document Number: 65017
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5459DU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 3 V
2.5
I
D
- Drain Current (A)
I
D
- Drain Current (A)
15
3.0
Vishay Siliconix
2.0
10
V
GS
= 2.5 V
5
1.5
T
C
= 25 °C
1.0
0.5
V
GS
= 2 V
0
0.0
0.0
0.0
T
C
= 125 °C
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.16
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
900
C
iss
600
V
GS
= 2.5 V
0.08
0.04
V
GS
= 4.5 V
300
C
rss
C
oss
0
0
5
10
I
D
- Drain Current (A)
15
20
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 6.7 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 16 V
4
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
Capacitance
V
GS
= 4.5 V; I
D
= - 6.7 A
V
GS
= 2.5 V; I
D
= - 5.3 A
2
0
0
3
6
9
12
15
18
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S16-0980-Rev. C, 23-May-16
On-Resistance vs. Junction Temperature
Document Number: 65017
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5459DU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= - 6.7 A
R
DS(on)
- On-Resistance (Ω)
0.12
Vishay Siliconix
I
S
- Source Current (A)
10
0.09
T
J
= 125 °C
0.06
T
J
= 150 °C
1
T
J
= 25 °C
0.03
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.2
1.1
V
GS(th)
(V)
1.0
I
D
= 250 µA
0.9
0.8
0.7
0.6
- 50
5
Power (W)
30
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
Time (s)
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
DC
1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-0980-Rev. C, 23-May-16
Document Number: 65017
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5459DU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
Vishay Siliconix
12
I
D
- Drain Current (A)
9
6
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
15
2.5
12
2.0
Power (W)
9
Power (W)
0
25
50
75
100
125
150
1.5
6
1.0
3
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0980-Rev. C, 23-May-16
Document Number: 65017
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
