®
SMBYW04-200
BYW4200B
HIGH EFFICIENCY FAST RECOVERY DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
Tj (max)
4A
200 V
0.85 V
150 °C
4
3
2
4 (TAB)
FEATURES AND BENEFITS
SUITED TO SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
DESCRIPTION
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.
Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
2
1(nc)
3
DPAK
BYW4200B
b
O
so
te
le
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ
= 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
DPAK
SMC
Tcase = 130°C
Tlead = 70°C
tp = 10 ms
sinusoidal
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
SMC
(JEDEC DO-214AB)
SMBYW04-200
Parameter
Value
200
10
4
70
- 65 to + 150
150
Unit
V
A
A
A
°C
°C
I
FSM
Tstg
Tj
October 1999 - Ed: 4C
1/6
SMBYW04-200 / BYW4200B
THERMAL RESISTANCE
Symbol
R
th (j-c)
R
th (j-l)
Parameter
Junction to case
Junction to leads
Package
DPAK
SMC
Value
5
20
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
V
F
**
Tests Conditions
Reverse leakage current
Forward voltage drop
* tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2%
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
I
F
= 12 A
I
F
= 4 A
V
R
= V
RRM
Min.
Typ.
0.15
0.8
Max.
10
0.5
1.25
0.85
Unit
µA
mA
V
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.037 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
t
fr
V
FP
Tj = 25°C
Tj = 25°C
Tj = 25°C
Test Conditions
I
F
= 1A
V
F
= 30V
I
F
= 4A
V
FR
= 1.1 x V
F
max
I
F
= 4A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0
O
so
b
te
le
r
P
uc
od
δ = 0.2
s)
t(
b
-O
dI
F
/dt = -50 A/µs
dI
F
/dt = -50 A/µs
dI
F
/dt = -50 A/µs
so
et
l
Min.
P
e
od
r
26
20
5
s)
t(
uc
Max.
35
Unit
ns
ns
V
Typ.
Fig. 2:
Peak current versus form factor.
IM(A)
20
18
16
14
12
10
8
6
P=1.0W
4
P=1.5W
2
0
0.0 0.1 0.2
δ = 0.05
δ = 0.1
δ = 0.5
δ=1
T
δ
=tp/T
P=2.0W
tp
P=2.5W
T
IF(av) (A)
1.5
2.0
2.5
3.0
3.5
δ
=tp/T
tp
δ
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
4.0
4.5
5.0
2/6
SMBYW04-200 / BYW4200B
Fig. 3:
Average forward current versus ambient
temperature (δ=0.5).
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IF(av)(A)
SMC
Rth(j-a)=Rth(j-l)
DPAK
Rth(j-a)=Rth(j-c)
Fig. 4:
Forward voltage drop versus forward
current (maximum values).
70.0
IFM(A)
Tj=100°C
(Typical values)
10.0
Tj=100°C
Rth(j-a)=75°C/W
Tj=25°C
1.0
T
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
25
Fig. 5-1:
Non repetitive surge peak forward current
versus overload duration (SMBYW04-200).
12
10
8
Ta=25°C
Fig. 5-2:
Non repetitive surge peak forward current
versus overload duration (BYW4200B).
IM(A)
50
45
40
35
30
25
20
15
10
I
M
5
0
1E-3
IM(A)
6
4
2
1E-3
I
M
t
Ta=50°C
δ
=0.5
t(s)
1E-2
1E-1
Fig. 6-1:
Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm) (SMBYW04-200).
Zth(j-a)/Rth(j-a)
δ
= 0.5
b
O
1.00
0.10
so
δ
= 0.2
δ
= 0.1
te
le
r
P
uc
od
s)
t(
1E+0
bs
-O
et
l
o
t
P
e
od
r
t(s)
s)
t(
uc
Tc=125°C
Tc=75°C
δ
=0.5
1E-2
1E-1
1E+0
Fig. 6-2:
Variation of thermal impedance junction
to case versus pulse duration (BYW4200B).
1.0
Zth(j-c)/Rth(j-c)
δ
= 0.5
0.5
δ
= 0.2
Single pulse
δ
= 0.1
T
0.2
Single pulse
T
tp(s)
0.01
1E-2
1E-1
1E+0
1E+1
δ
=tp/T
tp
tp(s)
0.1
1E-3
1E-2
1E-1
δ
=tp/T
tp
1E+2
5E+2
1E+0
3/6
SMBYW04-200 / BYW4200B
Fig. 7:
Reverse recovery current versus dI
F
/dt.
IRM(A)
IF=IF(av)
90% confidence
Fig. 8:
Reverse recovery time versus dI
F
/dt.
trr(ns)
IF=IF(av)
90% confidence
2.5
2.0
1.5
1.0
Tj=100°C
Tj=25°C
0.5
dIF/dt(A/µs)
0.0
1
10
100
100
90
80
70
60
50
40
30
20
10
0
Tj=100°C
Tj=25°C
dIF/dt(A/µs)
1
10
100
Fig. 9:
Junction capacitance versus reverse
voltage applied (typical values).
100
C(pF)
F=1MHz
Tj=25°C
Fig. 10:
Dynamic parameters versus junction
temperature.
%
250
IF=4A
dIF/dt=50A/µs
VR=30V
50
200
20
VR(V)
10
1
10
100
150
200
Fig. 11-1:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm) (SMBYW04-200).
Rth(j-a) (°C/W)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
100
25
et
l
o
50
P
e
75
od
r
100
s)
t(
uc
Qrr
IRM
trr
Tj(°C)
125
150
Fig. 11-2:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35mm)
(BYW4200B).
100
90
80
70
60
50
40
30
20
10
0
Rth(j-a) (°C/W)
S(Cu) (cm²)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(Cu) (cm²)
0
2
4
6
8
10
12
14
16
18
20
4/6
SMBYW04-200 / BYW4200B
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
Millimeters
Min.
Max
2.20
2.40
0.90
1.10
0.03
0.23
0.64
0.90
5.20
5.40
0.45
0.60
0.48
0.60
6.00
6.20
6.40
6.60
4.40
4.60
9.35
10.10
0.80 typ.
0.60
1.00
0°
8°
Inches
Min.
Max.
0.086
0.094
0.035
0.043
0.001
0.009
0.025
0.035
0.204
0.212
0.017
0.023
0.018
0.023
0.236
0.244
0.251
0.259
0.173
0.181
0.368
0.397
0.031 typ.
0.023
0.039
0°
8°
FOOT PRINT
(in millimeters)
6.7
b
O
so
te
le
1.6
r
P
2.3
uc
od
6.7
3
3
1.6
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
2.3
5/6
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