NVMFS5C612NL
Power MOSFET
Features
60 V, 1.36 mW, 250 A, Single N−Channel
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C612NLWF
−
Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
250
175
167
83
38
27
3.8
1.9
900
−55
to
+175
164
451
260
A
°C
A
mJ
°C
W
1
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V
(BR)DSS
60 V
R
DS(ON)
MAX
1.36 mW @ 10 V
2.3 mW @ 4.5 V
I
D
MAX
250 A
Unit
V
V
A
G (4)
D (5,6)
W
A
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 17 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C612L
XXXXXX =
(NVMFS5C612NL) or
XXXXXX =
612LWF
XXXXXX =
(NVMFS5C612NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
0.9
39
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
February, 2017
−
Rev. 6
1
Publication Order Number:
NVMFS5C612NL/D
NVMFS5C612NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 50 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 30 V,
I
D
= 50 A, R
G
= 1.0
W
V
GS
= 4.5 V, V
DS
= 30 V; I
D
= 50 A
V
GS
= 4.5 V, V
DS
= 30 V; I
D
= 50 A
V
GS
= 10 V, V
DS
= 30 V; I
D
= 50 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 50 A
0.78
0.66
78
36
42
105
nC
ns
1.2
V
19
51
47
18
ns
6660
2953
45
41
91
5
17.1
10.9
2.9
V
nC
pF
I
D
= 50 A
I
D
= 50 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
12.7
10
250
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±16
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
−5.76
1.13
1.65
151
2.0
V
mV/°C
1.36
2.3
mW
S
V
DS
= 15 V, I
D
= 50 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFS5C612NL
TYPICAL CHARACTERISTICS
200
180
I
D
, DRAIN CURRENT (A)
160
140
120
100
80
60
40
20
0
2.8 V
3.0 V
V
GS
= 10 V to 3.4 V
3.2 V
I
D
, DRAIN CURRENT (A)
200
180
160
140
120
100
80
60
40
20
0
T
J
= 125°C
T
J
=
−55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25°C
V
DS
≤
10 V
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
V
GS
, GATE VOLTAGE (V)
T
J
= 25°C
I
D
= 50 A
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
10
30
50
70
90
110 130
150 170 190
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1,000,000
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.9
1.7
1.5
1.3
1.1
0.9
0.7
−50 −25
0
25
50
75
100
125
150
175
V
GS
= 10 V
I
D
= 40 A
100,000
I
DSS
, LEAKAGE (nA)
10,000
1000
100
10
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
5
15
25
35
45
55
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS5C612NL
TYPICAL CHARACTERISTICS
7000
C, CAPACITANCE (pF)
6000
5000
4000
3000
2000
1000
0
0
10
C
ISS
Q
T
8
6
25
20
15
C
OSS
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
4
2
0
Q
GS
Q
GD
V
DS
= 30 V
T
J
= 25°C
I
D
= 50 A
10
5
0
C
RSS
20
30
40
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
0
10
20
30
40
50
60
70
80
90
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
V
GS
= 4.5 V
V
DD
= 30 V
I
D
= 50 A
t, TIME (ns)
100
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
46
I
S
, SOURCE CURRENT (A)
41
36
31
26
21
16
11
6
1
T
J
=
−55°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
= 25°C
T
J
= 125°C
t
d(off)
t
f
t
r
t
d(on)
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
V
GS
≤
10 V
100
I
DS
(A)
dc
10
R
DS(on)
Limit
Thermal Limit
Package Limit
1
0.1
1
V
DS
(V)
10
100
1
0.01 ms
0.1 ms
1 ms
10 ms
I
PEAK
(A)
100
Figure 10. Diode Forward Voltage vs. Current
T
J(initial)
= 25°C
T
J(initial)
= 100°C
10
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8000
10
30
NVMFS5C612NL
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
NVMFS5C612NL 650 mm
2
, 2 oz., Cu Single Layer Pad
1
0.1
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
0.01
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVMFS5C612NLT1G
NVMFS5C612NLWFT1G
NVMFS5C612NLT3G
NVMFS5C612NLWFT3G
NVMFS5C612NLAFT1G
NVMFS5C612NLWFAFT1G
Marking
5C612L
612LWF
5C612L
612LWF
5C612L
612LWF
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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